Multielement composite transparent conductive film and preparation method and application thereof

A technology of transparent conductive film and multi-component compounding, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve the problems of unstable electrical properties and high resistance of transparent conductive films

Active Publication Date: 2013-08-28
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The embodiment of the present invention provides a method for preparing a multi-component composite transparent conductive film and the film and application thereof, aiming to solve the problems of unstable electrical properties and high resistance of transparent conductive films in the prior art

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  • Multielement composite transparent conductive film and preparation method and application thereof
  • Multielement composite transparent conductive film and preparation method and application thereof
  • Multielement composite transparent conductive film and preparation method and application thereof

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preparation example Construction

[0016] The embodiment of the present invention is achieved in this way. The first aspect provides a method for preparing a multi-component composite transparent conductive film. Please refer to figure 1 , which includes the following steps:

[0017] S01: Preparation of AZO target material, Al 2 o 3 Mixed with ZnO powder, sintered as target material, the Al 2 o 3 The molar ratio with ZnO is 1 / 90~1 / 50;

[0018] S02: Preparation of ATO target material, Sb 2 o 3 and SnO 2 Powder mixed and sintered as target material, the Sb 2 o 3 with SnO 2 The molar ratio is 1 / 7~1 / 5;

[0019] S03: Thin film deposition, put the AZO target and ATO target into the magnetron sputtering chamber, vacuumize, set the substrate temperature at 500°C-800°C, and load a negative bias on the substrate, inert The gas flow rate is 15sccm-25sccm, the pressure is 0.2Pa-1.6Pa, the sputtering power of the AZO target and the ATO target is 60W-160W, and the deposition time is 40min-240min.

[0020] In step...

Embodiment 1

[0028] Choose Al 2 o 3 : ZnO=1:60 (molar ratio) powder, and Sb 2 o 3 :SnO 2 = 3:17 (molar ratio) powder, after uniform mixing respectively, sintered into two ceramic targets of Φ60×2mm, and put the targets into the vacuum cavity. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate is set to 90mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10-4 Pa, the substrate temperature rises to 650° C., 20 sccm of argon gas is introduced, and the pressure is adjusted to 1.0 Pa. The deposition of the film was started, wherein the sputtering power of the AZO target was set to 100W, the power of the ATO target was set to 120W, and the deposition time was 120min. The negative bias applied to the substrate was 0V for comparison.

Embodiment 2

[0030] Choose Al 2 o 3 : ZnO=1:60 (molar ratio) powder, and Sb 2 o 3 :SnO 2 = 3:17 (molar ratio) powder, after uniform mixing respectively, sintered into two Φ60×2mm ceramic targets, and put the targets into the vacuum cavity. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate is set to 90mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the substrate temperature rises to 650° C., 20 sccm of argon gas is introduced, and the pressure is adjusted to 1.0 Pa. The deposition of the film was started, wherein the sputtering power of the AZO target was set to 100W, the power of the ATO target was set to 120W, and the deposition time was 120min. The negative bias applied to the substrate was 20V.

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Abstract

The invention provides a multielement composite transparent conductive film and a preparation and application thereof, relating to the field of preparation of semiconductor materials. The preparation method comprises the following steps of: preparing an AZO target: mixing Al2O3 powder with ZnO powder to obtain a mixture and sintering the mixture to be used as the target, wherein the molar weight ratio of Al2O3 to ZnO is 1 / 90-1 / 50; preparing an ATO target: mixing Sb2O3 powder with SnO2 powder to obtain a mixture and sintering the mixture to be used as the target, wherein the molar weight ratioof Sb2O3 to SnO2 is 1 / 7-1 / 5; and depositing a film: feeding the AZO target and the ATO target into a magneto-controlled sputtering chamber, vacuumizing and setting the substrate temperature to be 500-800 DEG C, and loading a negative bias on the substrate, wherein the inert gas flow is 15sccm-25sccm, the pressure intensity is 0.2-1.6Pa, the sputtering powers of the AZO target and the ATO target are respectively 60-160W, and the deposition time is 40-240min.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, and in particular relates to a preparation method of a multi-component composite transparent conductive film, the prepared film and its application. Background technique [0002] Transparent conductive film is an optoelectronic material that combines optical transparency and electrical conductivity. Due to its excellent optoelectronic properties, it has become a research hotspot and a frontier topic in recent years. Although indium tin oxide ITO (Indium-Tin Oxide) thin film is currently the most widely used transparent conductive thin film material with excellent comprehensive photoelectric properties, due to the toxicity of indium, high price and poor stability, there are problems such as the attenuation of device performance caused by indium diffusion. , prompting people to try to find a cheap and excellent ITO replacement material. Among them, Al-doped ZnO (AZO...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08H01L31/0224
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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