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Film solar battery based on crystalline silicon and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problem of reducing the photoelectric conversion efficiency of thin-film solar cells, reducing the band gap width of thin-film solar cells, and contaminating single crystal silicon substrates and other issues, to achieve the effect of increasing the bandgap width, improving the photoelectric conversion efficiency, and reducing pollution

Inactive Publication Date: 2014-08-13
SILEVO CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] But there is following defect in above-mentioned technology: when the doping concentration of the phosphorus ion in the phosphorus-doped layer 3 or the boron ion in the boron-doped layer 5 is higher, then the phosphorus-doped layer 3 or the boron-doped layer 5 will pollute the monocrystalline silicon substrate 4, thereby reducing the photoelectric conversion efficiency of the thin-film solar cell; when the doping concentration of the phosphorus ion in the phosphorus-doped layer 3 or the boron ion in the boron-doped layer 5 is low, the bandgap width of the thin-film solar cell will be reduced, thereby It will also reduce the photoelectric conversion efficiency of thin-film solar cells

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  • Film solar battery based on crystalline silicon and manufacturing method thereof
  • Film solar battery based on crystalline silicon and manufacturing method thereof
  • Film solar battery based on crystalline silicon and manufacturing method thereof

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Embodiment Construction

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than here, so the present invention is not limited by the specific embodiments disclosed below.

[0036] As mentioned in the background section, in the prior art, both the P-type semiconductor layer and the N-type semiconductor layer are uniformly doped. In order to reduce the pollution to the I-type semiconductor layer, it is necessary to reduce the dopant ion concentration of the P-type semiconductor layer and the N-type semiconductor layer; in order to increase the bandgap width, it is necessary to increase the dopant ion concentration of the P-typ...

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Abstract

The invention relates to a film solar battery based on crystalline silicon and a manufacturing method thereof. The film solar battery based on the crystalline silicon comprises a baseplate, a first I-type semiconductor layer, a P-type semiconductor layer, a first electrode, a second I-type semiconductor layer, an N-type semiconductor layer and a second electrode, wherein the first I-type semiconductor layer, the P-type semiconductor layer and the first electrode are successively arranged on one side of the baseplate; the second I-type semiconductor layer, the N-type semiconductor layer and the second electrode are successively arranged on the other side of the baseplate; the P-type semiconductor layer comprises multiple P-type semiconductor sublayers with different doped ion concentrations, and the P-type semiconductor sublayers are successively arranged in a stacking manner according to the doped ion concentrations; the doped ion concentration of the P-type semiconductor sublayer positioned on the surface of the first I-type semiconductor layer is minimal; the N-type semiconductor layer comprises multiple N type semiconductor sublayers with different doped ion concentrations, and the N-type semiconductor sublayers are successively arranged in a stacking manner according to the doped ion concentrations; and the doped ion concentration of the N-type semiconductor sublayer positioned on the surface of the second I-type semiconductor layer is minimal. According to the invention, the photoelectric conversion efficiency of the film solar battery can be improved.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a thin-film solar cell based on crystalline silicon and a manufacturing method thereof. Background technique [0002] Thin-film solar cells are solar cells formed by depositing very thin (several micrometers to tens of micrometers) photoelectric materials on substrates such as glass, metal or plastic. Thin-film solar cells have a series of advantages such as power generation under weak light conditions, low energy consumption in the production process, and can greatly reduce raw material and manufacturing costs. They have become a research hotspot in recent years, and their market development potential is huge. [0003] Basic thin film solar cell structure, including single P-N junction, P-I-N / N-I-P and multi-junction. A typical single-junction P-N structure includes a P-type doped layer and an N-type doped layer. Single-junction P-N junction solar cells have two ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/077H01L31/20
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 傅建明杨瑞鹏
Owner SILEVO CHINA
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