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Suede-structured ZnO film prepared by alternative growth technology and application thereof

A technology of alternate growth and thin film, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of affecting the transmittance of the thin film, reducing the texture, and reducing the light scattering ability of the thin film, so as to improve the photoelectric conversion efficiency, simple craftsmanship

Inactive Publication Date: 2012-05-02
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the process of growing boron-doped ZnO thin films by MOCVD, the main effects of B doping are: 1) Appropriate B doping is beneficial to improve the electrical properties of the film; , the light scattering ability of the film decreases; 3) B doping will introduce too many free carriers, which will affect the transmittance of the film in the near-infrared region

Method used

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  • Suede-structured ZnO film prepared by alternative growth technology and application thereof
  • Suede-structured ZnO film prepared by alternative growth technology and application thereof
  • Suede-structured ZnO film prepared by alternative growth technology and application thereof

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Embodiment 1

[0024] An alternate growth technique to prepare textured ZnO thin films, using diethyl zinc and water with a purity of 99.995% as source materials, and borane B 2 h 6 For the doping gas, dilute the doping gas borane B with hydrogen 2 h 6 , doping gas borane B 2 h 6 The volume percent concentration in the mixed gas is 1.0%, and metal organic chemical vapor deposition (MOCVD) is used to alternately grow the textured structure ZnO-TCO film on the glass substrate, the steps are as follows:

[0025] 1) First, grow an undoped ZnO film on a glass substrate, the substrate temperature is 155°C, the coating reaction gas pressure is 130Pa, and the film thickness is 1000nm;

[0026] 2) Then grow a layer of B-doped ZnO film on the above-mentioned undoped ZnO film, the substrate temperature is 155°C, the coating reaction gas pressure is 130Pa, and the film thickness is 1000nm;

[0027] 3) Steps 1) and 2) above are repeated to obtain a ZnO thin film alternately grown in one cycle with a...

Embodiment 2

[0033] A method for preparing a ZnO film with a textured structure on a glass substrate, using diethyl zinc and water with a purity of 99.995% as source materials, and borane B 2 h 6 For the doping gas, dilute the doping gas borane B with hydrogen 2 h 6 , doping gas borane B 2 h 6 The volume percent concentration in the mixed gas is 1.0%, and metal organic chemical vapor deposition (MOCVD) is used to alternately grow the textured structure ZnO-TCO film on the glass substrate, the steps are as follows:

[0034] 1) First, grow an undoped ZnO film on a glass substrate, the substrate temperature is 155°C, the coating reaction gas pressure is 130Pa, and the film thickness is 100nm;

[0035] 2) Then grow a layer of B-doped ZnO film on the above-mentioned undoped ZnO film, the substrate temperature is 155°C, the coating reaction gas pressure is 130Pa, and the film thickness is 100nm;

[0036] 3) Steps 1) and 2) above were repeated to obtain 10 periods of alternately overlapped a...

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Abstract

The invention provides a suede-structured ZnO film prepared by an alternative growth technology. A suede-structured ZnO-TCO (transparent conductive oxide) film is alternatively grown on a glass substrate by a metal organic chemical vapor deposition method based on diethylzinc and water as source materials and hydrogen used for diluting and doping a gas borane B2H6. The steps are as follows: 1) firstly, growing a layer of undoped ZnO film on the glass substrate; 2), then growing a B-doped type ZnO film on the undoped ZnO film; and 3) repeating the steps 1) and 2), so as to obtain a multi-layer overlapping-grown ZnO film. The suede-structured ZnO film has the advantages that the direct growth of the suede-structured ZnO film on the glass substrate can be realized by using an MOCVD (metal oxide chemical vapor deposition) technology; the preparation method has simple process, and is convenient for large-area production and popularization; through the alternative growth technology compatible to the process technology, the light scattering of visible light and neat infrared regions and subsequent deposition of a silicon-based film are facilitated; and the suede-structured ZnO film can be applied to a film solar battery, thereby effectively improving the photoelectric conversion efficiency.

Description

【Technical field】 [0001] The invention belongs to the field of transparent conductive oxide films, in particular to an alternate growth technique for preparing ZnO films with a suede structure and its application. 【Background technique】 [0002] Transparent conductive oxides (Transparent conductive oxides-TCO) thin film refers to the average transmittance of visible light (λ = 380 ~ 800nm) high (T ≥ 80%), low resistivity (ρ ≤ 10 -3 Ωcm) oxide film. The widely studied and applied TCO films are mainly F-doped SnO 2 : F thin film, Sn-doped In 2 o 3 :Sn(ITO) thin film and Al-doped ZnO:Al thin film. In the field of solar cell applications, due to ITO and SnO 2 The thin film is easily reduced and blackened in the hydrogen plasma environment, which leads to the deterioration of its optical properties, which becomes an obstacle to its application. In recent years, ZnO thin film has low cost, non-toxicity, easy photolithographic processing and good chemical stability in H plasm...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/30H01L31/0224
Inventor 陈新亮张晓丹赵颖闫聪博魏长春张德坤耿新华
Owner NANKAI UNIV
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