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Method for obtaining large number of semi-conductive single-wall carbon nanometer tubes

A technology of single-walled carbon nanotubes and semiconductors, applied in the field of single-walled carbon nanotubes with single conductive properties, can solve the problems of maintenance, destruction of the intrinsic structure of single-walled carbon nanotubes, cumbersome steps, etc., and achieve good repeatability and good performance. Prospects for industrial applications, easily scalable effects

Inactive Publication Date: 2012-05-02
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for obtaining a large amount of high-purity, semiconducting single-walled carbon nanotubes with suitable diameter distribution, which overcomes the cumbersome steps in the separation process of existing chemical and physical methods and the inherent structure of single-walled carbon nanotubes. Serious damage and other problems, while maintaining the intrinsic structure of semiconducting single-walled carbon nanotubes, for the first time realized the macro-preparation of semiconducting single-walled carbon nanotubes

Method used

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  • Method for obtaining large number of semi-conductive single-wall carbon nanometer tubes
  • Method for obtaining large number of semi-conductive single-wall carbon nanometer tubes
  • Method for obtaining large number of semi-conductive single-wall carbon nanometer tubes

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Embodiment 1

[0024] A piece of ferrocene containing 0.5wt% sulfur powder (the weight ratio of sulfur powder and ferrocene is 0.5:99.5) is placed in the low temperature of the chemical vapor deposition reduction furnace (CVD furnace, the diameter is 25cm, and the length of the constant temperature zone is 4cm). Zone, under a hydrogen atmosphere of 200ml / min, the temperature was raised to 1100°C at a rate of 30°C / min, 3ml / min of methane and 0.2ml / min of oxygen were introduced, and the ferrocene was simultaneously pushed to a furnace temperature of 60 °C, the single-walled carbon nanotubes were grown by in-situ weak oxidation, and the growth time was 30 minutes. After the chemical vapor deposition is finished, turn off methane and oxygen, and drop to room temperature under the protection of hydrogen. 20 mg of single-walled carbon nanotubes prepared under the above conditions were uniformly placed in a heating furnace tube with a diameter of 25 cm and a constant temperature zone length of 4 cm...

Embodiment 2

[0026]A piece of ferrocene containing 0.5wt% sulfur powder (the weight ratio of sulfur powder and ferrocene is 0.5:99.5) is placed in the low temperature of the chemical vapor deposition reduction furnace (CVD furnace, the diameter is 25cm, and the length of the constant temperature zone is 4cm). zone, under a hydrogen atmosphere of 200ml / min, the temperature was raised to 1100°C at a rate of 30°C / min, 3ml / min of methane and 0.15ml / min of oxygen were introduced, and the ferrocene was simultaneously pushed to a furnace temperature of 60 °C, the growth of single-walled carbon nanotubes is carried out, and the growth time is 30 minutes. After the chemical vapor deposition is over, turn off the methane, and drop to room temperature under the protection of hydrogen. 20 mg of single-walled carbon nanotubes prepared under the above conditions were uniformly placed in a heating furnace tube with a diameter of 25 cm and a constant temperature zone length of 4 cm, and oxidized at 400 ° ...

Embodiment 3

[0029] A piece of ferrocene containing 0.5wt% sulfur powder (the weight ratio of sulfur powder and ferrocene is 0.5:99.5) is placed in the low temperature of the chemical vapor deposition reduction furnace (CVD furnace, the diameter is 25cm, and the length of the constant temperature zone is 4cm). zone, under a hydrogen atmosphere of 200ml / min, the temperature was raised to 1100°C at a rate of 30°C / min, 3ml / min of methane and 1.5ml / min of oxygen were introduced, and the ferrocene was simultaneously pushed to a furnace temperature of 60 °C, perform in-situ oxidation growth of single-walled carbon nanotubes, and the growth time is 30 minutes. After the chemical vapor deposition is finished, turn off methane and oxygen, and drop to room temperature under the protection of hydrogen. The above samples were directly characterized by transmission electron microscopy and Raman spectroscopy. The characterization results show that single-walled carbon nanotubes cannot be grown under th...

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Abstract

The invention relates to the field of single-wall carbon nanometer tubes, in particular to a method for obtaining a large number of semi-conductive single-wall carbon nanometer tubes through combining post treatment oxidation with chemical gas-phase deposition in-situ weak oxidation. Trace oxygen is introduced in the process of chemical gas-phase deposition growth of the singe-wall carbon nanometer tubes, and then, the prepared single-wall carbon nanometer tubes are oxidized in the air at the proper temperature. Ferrocene is used as a catalysis precursor, hydrogen is used as carrying gas, sulfur powder is used as growth promoters, carbon source gas and trace oxygen are simultaneously introduced at a certain temperature for carrying out the growth and in-situ weak oxidation of single-wall carbon nanometer tubes, the obtained single-wall carbon nanometer tube samples are oxidized for a long time in the air atmosphere at the low temperature, and the oxidized samples are soaked into hydrochloric acid solution to remove catalyst particles, are cleaned and dried. The method realizes the mass preparation of the single conductive (semi-conductive) single-wall carbon nanometer tubes and solves the problems that the damage to the intrinsic structure of the single-wall carbon nanometer tubes in the existing chemical and physical method separation process is serious, and the like.

Description

technical field [0001] The invention relates to the field of single-conductivity (semiconducting) single-walled carbon nanotubes, specifically a method for obtaining a large amount of semiconducting single-walled carbon nanotubes by combining chemical vapor deposition in-situ weak oxidation and post-treatment oxidation. Background technique [0002] The conductive properties of single-walled carbon nanotubes are closely related to their structure. Due to the different curling methods that make up their graphene sheets, they can be metallic or semiconducting, and carbon nanotubes have excellent transport properties. Therefore, carbon nanotubes are considered to be Ideal materials for the construction of nanoelectronic devices. Obtaining carbon nanotubes with uniform conductive properties is an important prerequisite and basis for their application in nanoelectronic devices and other fields. But usually the prepared carbon nanotube samples are a mixture of metallic and semico...

Claims

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Application Information

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IPC IPC(8): C01B31/02
Inventor 侯鹏翔于冰刘畅成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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