Vertical type PNP triode in SiGe BiCMOS process and manufacturing method thereof

Abstract

The invention discloses a vertical type PNP triode in a SiGe BiCMOS process and a manufacturing method thereof. The vertical type PNP triode comprises a collector region, an outer isolation region, a base region, and an emission region. The collector region is composed of first P type impurity regions and P type burying layers; the P type burying layers are formed at shallow groove field oxygen bottoms that are at two sides of an active area as well as are adjoined with the active area; deep hole contacts are formed at the tops of the P type burying layers so as to lead out collectors. The outer isolation region includes N type burying layers that formed at the shallow groove field oxygen bottoms that are at the two sides of the active area; and there are lateral separations between the N type burying layers and the P type burying layers. The base region comprises an intrinsic base region and an outer base region. The intrinsic base region is formed by an N type silicon epitaxial layer that is formed at the upper portion of the active area. The emission region is formed by a P type SiGe epitaxial layer and a polysilicon layer, wherein the P type SiGe epitaxial layer is formed on the intrinsic base region. In addition, the invention also discloses a manufacturing method of the vertical type PNP triode in the SiGe BiCMOS process. According to the invention, a characteristic frequency of the PNP triode can be improved; the PNP triode can be integrated into a current process; flexibilities of the PNP triode design can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a vertical PNP transistor in a silicon-germanium BiCMOS process, and also relates to a manufacturing method for a vertical PNP transistor in a silicon-germanium BiCMOS process. Background technique [0002] In the silicon germanium BiCMOS process, the cut-off frequency and breakdown voltage of the NPN triode, that is, the N-type tube, have been made very high, but the performance of the PNP triode, that is, the P-type tube, is poor. Most of the existing P-type tubes adopt a parasitic transverse structure. like figure 1 As shown, it is a PNP transistor in the existing SiGe BiCMOS process, which is formed on a P-type silicon substrate 1, and the active region is isolated by a shallow trench field oxygen 2. The PNP transistor includes: [0003] A collector region is composed of a P well 6 and a P-type pseudo-buried layer 4, the P well 6 is formed at th...

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Problems solved by technology

[0007] Due to the consideration of the breakdown voltage and process repeatability of the existing PNP transistor, the base area width is relatively wide

In addition, the collector region of the existing PNP transistor is formed by P well technology, and the emitter region is formed by ion implantation. The combination makes the emitter region, the base region and the collector region very wide, and the emitter-base depletion region, base-collector The width of the depletion region is also large

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