MOS (Metal-Oxide-Semiconductor) transistor and manufacturing method thereof

Abstract

The invention provides an MOS (Metal-Oxide-Semiconductor) transistor and a manufacturing method thereof. The method comprises the following steps of: providing a semiconductor substrate, wherein a gate structure is formed on the semiconductor substrate; carrying out carbon ion implantation on the semiconductor substrates at two sides of the gate structure to form a defect adsorption zone; carrying out an oxidation process to form an oxide layer covering the gate structure; and sequentially forming a source / drain extension zone and a baggy implantation zone surrounding the source / drain extension zone in the semiconductor substrates at the two sides of the gate structure, wherein the size of the baggy implantation zone along the channel length direction is less than or equal to the size of the defect adsorption zone. In the invention, carbon ions are formed before the oxidation process is carried out; and by utilizing the defects formed by carbon ion adsorption and oxidation processes, the oxidation enhanced diffusion effect and the transient enhanced diffusion effect are eliminated, and the short channel effect and the adverse short channel effect are improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a MOS transistor and a manufacturing method thereof. Background technique [0002] Metal-oxide-semiconductor (MOS) transistors are the most basic devices in semiconductor manufacturing. They are widely used in various integrated circuits. According to the main carrier and the type of doping during manufacturing, they are divided into NMOS and PMOS transistors. [0003] The prior art provides a method for manufacturing a MOS transistor. Please refer to Figure 1 to Figure 3 , is a schematic cross-sectional structure diagram of a manufacturing method of a MOS transistor in the prior art. [0004] Please refer to figure 1 , providing a semiconductor substrate 100, forming isolation structures 101 in the semiconductor substrate 100, the semiconductor substrate 100 between the isolation structures 101 is an active region, and forming a doped well in the active region (not shown), the...

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Problems solved by technology

[0010] In practice, it has been found that the MOS transistors fabricated by existing methods have the defect of Transient Enhanced Diffusion (TED), which not only causes the Short Channel Effect (SCE) of the transistor ) and reverse short channel effect (Reverse Short Channel Effect, RSCE), and affect the transistor channel mobility, junction capacitance and junction leakage current

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