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Aluminum nitride ceramic substrate 80W loading plate with impedance of 50 omega

A technology of aluminum nitride ceramics and aluminum nitride substrates, which is applied in the direction of electrical components, circuits, waveguide devices, etc., can solve the problems that cannot meet the requirements of miniaturization of environmental protection base stations, and achieve a wide range of use, good matching, and expanded applications field effect

Inactive Publication Date: 2012-01-18
苏州市新诚氏通讯电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in order to achieve the corresponding power, the domestic load chips all use larger ALN substrates or toxic Beo (beryllium oxide) substrates, which cannot meet the requirements of environmental protection or the miniaturization of traffic base stations.

Method used

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  • Aluminum nitride ceramic substrate 80W loading plate with impedance of 50 omega
  • Aluminum nitride ceramic substrate 80W loading plate with impedance of 50 omega

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Embodiment Construction

[0012] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0013] like figure 1 As shown, the impedance is 50Ω aluminum nitride ceramic substrate 80 watts load plate includes a 5.0*5.0*1.0mm aluminum nitride substrate 1, the back of the aluminum nitride substrate 1 is printed with a back conductive layer, the aluminum nitride substrate 1 Resistor 3 and wire 2 are printed on the front, wire 2 is connected to resistor 3 to form a load circuit, and the ground terminal of the load circuit is connected to the back conductive layer through silver paste, so that the load circuit is grounded and conducted. The back conducting layer and wire 2 are printed with conductive silver paste, and the resistor 3 is printed with resistive paste. A glass protective film 4 is printed on the resistor 3 . A layer of black protective film 5 is also printed on the upper surfaces of the wires 2 and the glass protective film...

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PUM

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Abstract

The invention discloses an aluminum nitride ceramic substrate 80W loading plate with the impedance of 50 omega. The aluminum nitride ceramic substrate 80W loading plate comprises a 5.0*5.0*1.0mm aluminum nitride substrate, wherein a back conducting layer is printed on the back side of the aluminum nitride substrate; a resistor and a lead are printed on the front side of the aluminum nitride substrate; the lead is connected with the resistor to form a load circuit; the ground terminal of the load circuit is electrically connected with the back conducting layer; and a glass protecting film is printed on the resistor. The aluminum nitride ceramic substrate 80W loading plate with the impedance of 50 omega and the structure has favorable VSWR (Voltage Standing Wave Ratio) performance; the power of the high-power aluminum nitride ceramic substrate loading plate on the 5.0*5.0*1.0mm aluminum nitride substrate reaches 80W; and meanwhile, the capacity of the high-power aluminum nitride ceramic substrate 80W loading plate is ensured to reach 3G, the power of the aluminum nitride ceramic substrate loading plate with the size is improved to be 80W on the premise of excellent performance, the service range of the aluminum nitride ceramic substrate with the size is wider and the aluminum nitride ceramic substrate with the size can be better matched with equipment.

Description

technical field [0001] The invention relates to a loading sheet of an aluminum nitride ceramic substrate, in particular to an 80-watt loading sheet of an aluminum nitride ceramic substrate with an impedance of 50Ω. Background technique [0002] The aluminum nitride ceramic substrate load plate is mainly used in the communication base station to absorb the reverse input power of the communication components. If it cannot withstand the required power, the load will burn out, which may cause the entire device to burn out. The basic size of the load sheet is required to be smaller and smaller, and the power to be absorbed is larger and larger. The characteristics of the product, that is, the smaller the VSWR (standing wave ratio), the better, and the market base needs to be within 1.25:1. With the frequency band The higher the product is, the higher the VSWR of the product will be. [0003] At present, in order to achieve the corresponding power, domestic load chips use larger ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
Inventor 郝敏
Owner 苏州市新诚氏通讯电子股份有限公司
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