Estimation method of the relative position of the radiation displacement damage area in the coms device in the channel

Abstract

The invention discloses a method for estimating relative position of a radiation displacement damage area of a COMS (Complementary Metal Oxide Semiconductor) device in a channel. In the method, the groove of the CMOS device is partitioned into two parts; a part close to a source end is an area I; and a part to a drain end is an area II. When the situation after radiation is compared with the situation before radiation, the radiation displacement damage area is in the area I if the gate source capacitance is decreased while the gate drain capacitance is increased; and the radiation displacement damage area is in the area II if the gate source capacitance is increased while the gate drain capacitance is decreased. Specific to the CMOS device, relative position of the radiation displacement damage area in the groove is represented according to the change of intrinsic capacitance before and after radiation. The method is simple, is easy to operate, and plays a great role in researching single particles, modeling single particles and reinforcing integrated circuits; and a thought for determining the position of the radiation displacement damage area on the CMOS device is provided.

Description

technical field [0001] The invention relates to a method for estimating the position of radiation displacement damage, in particular to a method for estimating the relative position of the radiation displacement damage area of ​​a CMOS device in a channel. Background technique [0002] With the wide application of integrated circuit technology in the field of aerospace, the irradiation effect of a large number of cosmic rays in the universe and outer space on integrated circuits will cause the degradation of electronic components and circuit characteristics. Radiation effect has become the main cause of failure of space components. It is of great significance to study the radiation effect of deep submicron integrated circuits working in space environment and nuclear explosion irradiation environment, and to develop anti-irradiation integrated circuits. [0003] The interaction between high-energy particles and semiconductor materials will cause displacement damage in semico...

AI Technical Summary

Problems solved by technology

However, the working mechanism of CMOS devices mainly depends on the conductive channel formed by the surface inversion layer. The damage caused by heavy ions in the channel region will seriously affect the static and transient characteristics of CMOS devices and cause serious reliability problems. Wait

At present, due to the uncertainty of the incident position of heavy ions, it is always an international problem to determine the relative position of the displacement damage region induced by heavy ion irradiation in the channel region

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