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Method for manufacturing memory cell including resistor

A storage unit and manufacturing method technology, applied in the direction of electrical components, information storage, static memory, etc., to achieve the effect of high-density integration and excellent interface characteristics

Inactive Publication Date: 2011-12-07
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to effectively control and adjust the characteristics of oxygen vacancies in the above-mentioned prior art methods

Method used

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  • Method for manufacturing memory cell including resistor
  • Method for manufacturing memory cell including resistor
  • Method for manufacturing memory cell including resistor

Examples

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example

[0024] As an illustrative example, the method includes steps executed in the following order.

[0025] See figure 1 , Prepare insulating substrate. The insulating substrate may be a laminated substrate whose surface layer is an oxide layer.

[0026] For example, the insulating substrate includes a single crystal Si base layer (base) 10 and SiO 2 Layer 11 laminated substrate. A part of the single crystal Si underlayer 10 can be converted into SiO by thermal oxidation 2 . Or, instead, SiO is formed on the single crystal Si underlayer 10 by a chemical vapor deposition (CVD) method. 2 Layer 11.

[0027] See figure 2 , By sputtering or evaporation, in SiO 2 A Ti layer 12 is formed on the layer 11 as an adhesion layer, and then a bottom electrode layer 13 (such as Pt) is formed on the Ti layer 12 by sputtering, evaporation or MOCVD.

[0028] The Ti layer 12 is an optional layer and is mainly used to improve the adhesion strength of the bottom electrode layer 13 on the substrate.

[0029]...

example 1

[0069] Example 1: Using MOCVD method to manufacture Si / SiO 2 / Ti / Pt / HfO 2 / TiN structure RRAM memory cell

[0070] Using Si crystal thermal oxidation to produce SiO 2 Insulation layer, using sputtering method in Si / SiO 2 Ti film is fabricated on top, and Si / SiO 2 The / Ti structure is placed in the MOCVD reaction chamber.

[0071] First, a Pt metal bottom electrode is manufactured. With platinum acetylacetonate as the precursor, it is sublimated at 150℃ to form platinum acetylacetonate gas, using Ar 2 As a carrier gas into the reaction chamber, O 2 As the reaction gas is introduced into the reaction chamber, the substrate temperature is maintained at 400 ℃, and the pressure of the reaction chamber is at 100 Pa. 2 Pt film is formed on Ti substrate to obtain Si / SiO 2 / Ti / Pt structure.

[0072] Use Hf(OC 2 H 5 ) 4 As the precursor, the solid alkoxide is dissolved in isopropanol to form a liquid precursor, which evaporates to form Hf(OC 2 H 5 ) 4 Gas, using Ar 2 As a carrier into the reac...

example 2

[0076] Example 2: Using MOCVD method to manufacture Si / SiO 2 / Ti / Pt / Zr 0.99 La 0.01 O 2 / Pt structure RRAM storage unit

[0077] Using Si crystal thermal oxidation to produce SiO 2 Insulation layer, using evaporation method in Si / SiO 2 Ti film is fabricated on top, and Si / SiO 2 The / Ti structure is placed in the MOCVD reaction chamber.

[0078] First, a Pt metal bottom electrode is manufactured. Platinum solid acetylacetonate is used as the precursor to sublime at 150℃ to form platinum acetylacetonate gas, using Ar 2 As a carrier gas into the reaction chamber, oxygen as a reaction gas into the reaction chamber, the substrate temperature is maintained at 500 ℃, the pressure of the reaction chamber is 100 Pa, in Si / SiO 2 Pt film is formed on the substrate to obtain Si / SiO 2 / Ti / Pt structure.

[0079] Use Zr(tmhd) 4 Solid and La(tmhd) 3 As a precursor, according to the molar ratio of Zr and La and the average speed of the deposition of the two metals, the required amount of the two prec...

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Abstract

The present application discloses a manufacturing method of a memory cell including a resistor, comprising the following steps: a) forming a bottom electrode layer on an insulating substrate; b) forming a resistive material layer on the bottom electrode layer by MOCVD; c) forming a resistive material layer on the bottom electrode layer; forming a top electrode layer on the resistive material; and d) patterning the top electrode layer and the resistive material layer to form separated memory cells. The MOCVD method can be used to manufacture a resistive material layer with precise controllable thickness and composition and good uniformity, so that a memory cell of an RRAM with an MOM structure and excellent interface characteristics can be obtained.

Description

Technical field [0001] The present invention relates to a method for manufacturing a memory cell containing a resistor, and in particular to a metal organic chemical vapor deposition (MOCVD) manufacturing method for a memory cell of a resistive random access memory (RRAM) of a metal / oxide / metal (MOM) structure. Background technique [0002] Non-volatile memory has the advantage of keeping data information even when there is no power supply. It has a very important position in the field of information storage and is also one of the current research hotspots in information storage technology. However, today's mainstream non-volatile memory-flash memory (flash) has problems such as high operating voltage, slow speed, and poor durability. [0003] RRAM has shown advantages such as fast working speed, high storage density, long data retention time, and strong endurance, and is a strong candidate for the next generation of semiconductor memory. The basic memory cell of RRAM includes a m...

Claims

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Application Information

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IPC IPC(8): H01L45/00C23C16/44
CPCH01L45/1666H01L45/145H01L45/1616G11C13/0007H10N70/883H10N70/023H10N70/061
Inventor 刘力锋康晋锋郝跃刘晓彦陈沅沙高滨王漪韩汝琦
Owner PEKING UNIV
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