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Etching method of single crystal silicon material for solar cell

A solar cell and crystalline silicon technology, applied in the field of solar cell material processing, can solve the problems of high manufacturing cost, complex auxiliary equipment, serious environmental pollution, etc., and achieve the effect of improving efficiency and photoelectric conversion efficiency

Inactive Publication Date: 2011-11-23
陈必雄
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] For decades, the method of making texture for crystalline silicon solar cells has been unable to get rid of several methods such as using alkaline texture for monocrystalline silicon and acidic texture for polycrystalline silicon, but no matter which method is used, there are the following defects: one is The pyramids on the surface of the silicon wafer are not uniform enough, and there is some reflection, which makes it difficult to further improve the conversion efficiency; second, due to the need to use a large amount of alkaline or acidic chemicals, the environmental pollution is very serious; third, the manufacturing cost is high; fourth, the production Huge equipment and complex auxiliary equipment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The polysilicon material is placed in the carrier boat in the vacuum reaction chamber. After the reaction chamber is closed, the cleaning gas nitrogen is introduced first, and then the mixed reaction gas of chlorine, sulfur hexafluoride and oxygen is passed into the reaction chamber, and the gas pressure is controlled to be 200Pa, the total gas flow rate is 1000ml / min, the flow ratio of chlorine: sulfur hexafluoride: oxygen is 1:2:2, and a high-frequency electricity with a frequency of 450KHz is applied to the reaction chamber; Nitrogen gas is introduced into the reaction chamber to clean up the remaining reaction mixture gas.

[0020] The polysilicon material processed by the above-mentioned texturing method has a four-sided pyramid structure, and the above-mentioned polysilicon material with a four-sided pyramid structure is used to make solar cells, and the photoelectric conversion efficiency can reach 18%. The photoelectric conversion efficiency of the fabricated so...

Embodiment 2

[0022] The single crystal silicon material is placed in the carrier boat in the vacuum reaction chamber. After the reaction chamber is closed, the cleaning gas helium is introduced first, and then the mixed gas of bromine, sodium hydroxide and oxygen is introduced into the reaction chamber to control the gas flow. The pressure is 180Pa, the total gas flow rate is 2500ml / min, the flow ratio of each gas is: 15:2:28, and high-frequency electricity with a frequency of 14MH is applied to the reaction chamber; after the reaction is completed, it is passed into the reaction chamber Helium, to clean the rest of the reaction gas mixture.

[0023] The monocrystalline silicon material processed by the above-mentioned texturing method has a square pyramid structure with uniform size, and the above-mentioned monocrystalline silicon material with the square pyramid structure is used to make solar cells, and the photoelectric conversion efficiency can reach 19%; under the same conditions The...

Embodiment 3

[0025] The polycrystalline silicon material and single crystal silicon material are placed together in the carrier boat in the vacuum reaction chamber. After the reaction chamber is closed, the cleaning gas nitrogen is first introduced into the reaction chamber, and then nitric acid gas, chlorine gas, sulfur hexafluoride and Oxygen mixed reaction gas, the control gas pressure is 230Pa, the total gas flow rate is 1800ml / min, and high-frequency electricity with a frequency of 12.5MHz is applied to the reaction chamber; after the reaction is completed, air is introduced into the reaction chamber, and the remaining The reaction mixture gas is cleaned.

[0026] The above-mentioned polycrystalline silicon material and monocrystalline silicon with four-sided pyramid structure are used to make solar cells respectively, and their photoelectric conversion efficiencies can reach 18% and 19% respectively; , and the photoelectric conversion efficiencies are 16.6% and 18% respectively; the ...

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Abstract

The invention provides an etching method of a single crystal silicon material for a solar cell. The etching method comprises the steps of: introducing a reaction gas to a vacuum reaction cavity filled with a single crystal silicon material, applying high-frequency electricity to the reaction cavity at a certain pressure, wherein the reaction gas is a mixed gas of oxygen or one or more gases selected from nitric acid gas, chlorine, sulfur hexafluoride and alkali metal hydroxides. According to the single crystal silicon material prepared by adopting the etching method, the photoelectric conversion efficiency of the solar cell can be greatly increased; and according to the method provided by the invention, liquid acid and alkaline are fully eliminated, zero emission is realized, no any pollution is produced to the environment, and a large quantity of manufacture cost is saved.

Description

technical field [0001] The invention relates to a processing method for solar cell materials, in particular to a method for making texture of crystalline silicon materials used therein. Background technique [0002] For decades, the method of making texture for crystalline silicon solar cells has been unable to get rid of several methods such as using alkaline texture for monocrystalline silicon and acidic texture for polycrystalline silicon, but no matter which method is used, there are the following defects: one is The pyramids on the surface of the silicon wafer are not uniform enough, and there is some reflection, which makes it difficult to further improve the conversion efficiency; second, due to the need to use a large amount of alkaline or acidic chemicals, the environmental pollution is very serious; third, the manufacturing cost is high; fourth, the production The equipment is huge and the auxiliary equipment is complicated. Contents of the invention [0003] Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈必雄
Owner 陈必雄
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