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Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor

A porous film, wo3-cr2o3 technology, applied in chemical instruments and methods, material resistance, lamination devices, etc., can solve the problems of poor selectivity and low sensitivity, achieve low energy consumption and cost, high sensitivity, research and application Significant effect

Inactive Publication Date: 2011-11-23
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The gas sensor of the present invention has the characteristics of good selectivity, high sensitivity, fast response-recovery time, good stability, etc., solves the problems of poor selectivity and low sensitivity of current gas sensors, and greatly expands the application of this type of gas sensor in various fields application in

Method used

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  • Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor
  • Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor
  • Cr2O3 or NiO porous film material using WO3 as base material and method for manufacturing air-sensitive sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) In a 50mL beaker, weigh 3.7479g of powder raw material H 2 WO 4 , put it into a beaker, add 12.5mL of distilled water to dissolve, and mix well; weigh 0.006g of powder raw material Cr(NO 3 ) 3 9H 2 O and 0.5g of powdered raw material urea were put into the above beaker, and 20mL of 30% H 2 o 2 Solution, mixed evenly and then ultrasonically dispersed to obtain WO 3 base mixed solution.

[0023] (2) under magnetic stirring, to WO 3 6 mL of 2 mol / L citric acid was added dropwise to the base mixed solution, and 3 mol / L ammonia water was added to adjust the pH value to 3 to ensure the stability of the sol. Afterwards, the mixed solution was placed in a heating environment, the temperature was controlled at 70 ° C, stirred by a magnetic stirrer for 2 hours, and mixed well to obtain Cr 2 o 3 Uniform and stable WO with 0.1% doping 3 base precursor sol.

[0024] (3) Al with a length of about 4mm, inner and outer diameters of about 0.8mm and 1.2mm, with Au electrod...

Embodiment 2

[0028] The preparation process steps are the same as in Example 1, except that 0.006g powder raw material Cr(NO 3 ) 3 9H 2 O, instead weigh 0.3g powder raw material Cr(NO 3 ) 3 9H 2 O is put into the beaker; in the above (2) to WO 3 5mL of 2mol / L citric acid was added dropwise to the base mixed solution, and 3mol / L ammonia water was added to adjust the pH to 4. The mixed solution was placed in a heating environment with the temperature controlled at 80°C, and finally Cr 2 o 3 Uniform and stable WO with 5% doping 3 base precursor sol; in the above (3), dry the ceramic tube at 170 °C, and repeat the above steps 4 times; in the above (4), heat-treat the dried film at 500 °C for 1.5 hours, after sintering, use Heat up to this temperature and keep warm for 1.5 hours; in the above (5), the gas to be measured is acetone, and the sensitivity is 8.91.

Embodiment 3

[0030] The preparation process steps are the same as in Example 1, except that 0.006g powder raw material Cr(NO 3 ) 3 9H 2 O, instead weigh 0.6g powder raw material Cr(NO 3 ) 3 9H 2 O is put into the beaker; in the above (2) to WO 3 10mL of 2mol / L citric acid was added dropwise to the base mixed solution, and 3mol / L ammonia water was added to adjust the pH value to 5. The mixed solution was placed in a heating environment with the temperature controlled at 100°C, and finally Cr 2 o 3 Uniform and stable WO with 10% doping 3 base precursor sol; in the above (3), the ceramic tube was dried at 200 °C, and the above steps were repeated 6 times; in the above (4), the dried film was heat-treated at 700 °C for 2 hours, after sintering, using Heat up to this temperature for 2 hours. In the above (5), the gas to be measured is ammonia, and the sensitivity is 1.27.

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Abstract

The invention relates to a preparation method for a Cr2O3 or NiO porous film material using WO3 as a base material and a method for manufacturing an air-sensitive sensor. A WO3-Cr2O3 or WO3-NiO sol material is prepared by using chemical pure tungstic acid H2WO4 and analytical pure Cr(NO3)3.9H2O or Ni(NO3)2.6H2O as raw materials, 2mol / L of citric acid as a complexing agent, 30 percent of hydrogen peroxide (H2O2) as a dispersing agent and urea as a pore-forming agent. A porous film type air-sensitive sensor manufactured by a sol-gel method has the characteristics of high selectivity, high sensitivity, short response-recovery time, high stability and the like. By the methods, the sensitivity of low-concentration specific gas can be detected; and the methods are particularly suitable for the fields of breath detection, food quality detection, environment detection and the like, have obvious research and application value, have the characteristics of low energy consumption, low cost, smallvolume and the like and are easy to operate.

Description

technical field [0001] The invention belongs to the engineering field of semiconductor gas sensitive materials and relates to WO 3 A semiconductor-based porous film material and a preparation method of the material sensor. Specifically, WO 3 Cr as base material 2 o 3 A method for preparing a porous film material or NiO and a method for preparing a gas sensor. Background technique [0002] With the development of society and the improvement of people's living standards, people increasingly need to detect various gases that may come into contact with them in daily life and industrial production. For example, in the field of industry and public safety, the leakage of acetone gas in the environment can be monitored by the acetone gas sensor, which can give an alarm to the possible major hazards in terms of safety and personal health; The concentration of acetone in the gas can be used to judge whether there is type 1 diabetes. In the detection of drunk driving, by detectin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B37/06B32B37/14B32B38/18C04B41/85G01N27/04
Inventor 高鹏季惠明冯婉评曹培周玉贵
Owner TIANJIN UNIV
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