Method for inhibiting porous low dielectric constant medium from absorbing water vapor

A low dielectric constant, dielectric technology, applied in the field of microelectronics, can solve the problems of increasing the interconnection delay, increasing the effective dielectric constant of the medium in the interconnection structure, etc.

Inactive Publication Date: 2011-11-09
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The introduction of CMP protection layer will increase the effective dielectric constant of the medium in the interconnection structure, which will increase the interconnection delay

Method used

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  • Method for inhibiting porous low dielectric constant medium from absorbing water vapor
  • Method for inhibiting porous low dielectric constant medium from absorbing water vapor
  • Method for inhibiting porous low dielectric constant medium from absorbing water vapor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] After the porous low-K dielectric is etched to form a pattern, a certain proportion of methane and argon is filled in the CVD chamber. In this example, the ratio of CH4 / Ar gas flow is 30sccm / 100sccm. K medium for processing. The various condition parameters in this example are: the air pressure is 0.3 Torr, the power is 160 watts, and the processing time is 30 seconds. After treatment, the surface and sidewalls of the porous low-K media are covered with a hydrocarbon layer. combine figure 2 The surface free energy spectrum of and image 3 Fourier Transform Infrared Spectroscopy (FTIR), it can be seen that after soaking in the two polishing solutions for 5 minutes, the water vapor in the porous low-k medium sample after methane plasma treatment is significantly less than that of the untreated porous low-k medium sample. From Figure 8 It can be seen that after methane plasma treatment, the dielectric constant of the porous low-K dielectric is almost the same as tha...

Embodiment 2

[0022] After the porous low-k dielectric is etched to form patterns, the CVD chamber is filled with a certain proportion of methane and helium, and the porous low-k dielectric is treated with methane and helium plasma. After treatment, the surface and side walls of the porous low-K medium will be covered with a layer of carbon layer, which can prevent the inhalation of water vapor in the subsequent process and improve the reliability of the application of the porous low-K medium.

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Abstract

The invention belongs to the technical field of micro-electronics, in particular relates to a method for inhibiting a porous low dielectric constant medium from absorbing water vapor. According to the invention, a hydrocarbon layer is deposited on the surface and the side wall of the porous low-K medium by using mixed gas plasma with certain ratio of methane (CH4) and argon (Ar); and by using the hydrocarbon layer, the porous low-K medium can be inhibited from absorbing the water vapor in the chemically mechanical polishing process. The method provided by the invention has the characteristics of simplicity, convenience and strong practicability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for suppressing the absorption of water vapor by a porous low dielectric constant medium. Background technique [0002] As the size of integrated circuit devices gradually shrinks, the delay of integrated circuit interconnection becomes more and more significant. In order to reduce the back-end interconnect delay, traditional aluminum (Al) interconnects have been replaced by copper (Cu) interconnects. In order to further reduce the interconnection delay, it is proposed to use low K dielectric instead of SiO 2 Acts as an interconnect metal interlayer dielectric. According to the requirements of the International Technology Roadmap for Semiconductors (ITRS), porous low-K dielectrics will be used in 22nm and below technology nodes. Compared to SiO 2 , The mechanical strength of the low-K medium is very weak, and it is easy to peel off and scratch du...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768C23C16/00
Inventor 鲁海生屈新萍
Owner FUDAN UNIV
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