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Method for manufacturing GaN (gallium nitride) substrate

A substrate and transition layer technology, applied in the field of GaN substrate preparation, can solve the problems of low yield, high price, complicated process, etc.

Active Publication Date: 2011-10-26
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The above three methods have high requirements for low-temperature insertion layer, lateral epitaxy technology and other processes, and the process is relatively complicated, which is easily affected by the process and affects the crystal quality of GaN substrate materials. Not high, leading to the fact that the existing GaN substrate has not yet been commercialized, and the price is expensive

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  • Method for manufacturing GaN (gallium nitride) substrate
  • Method for manufacturing GaN (gallium nitride) substrate

Examples

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Embodiment 1

[0025] Embodiment 1: Preparation of c-plane self-supporting GaN substrate, as shown in the accompanying drawings:

[0026] 1) The substrate can be sapphire, silicon carbide, Si and other substrates, or GaN, AlN, InN or other III-nitride material thin films grown on sapphire, silicon carbide, Si and other substrates. Arrange carbon nanotubes in parallel on the substrate, the arrangement is parallel arrangement along the growth plane, the arrangement can be isoperiodic, or a periodic disordered structure, the carbon nanotubes can be a single carbon nanotube or a group of carbon nanotubes Clusters of carbon nanotubes, in various forms such as single-layer or multi-layer. The present embodiment selects the sapphire substrate of c plane, selects the single-layer carbon nanotubes arranged vertically along the reference side of the substrate at equal periods; the diameter of the carbon nanotubes is 1-100 nanometers, and this embodiment adopts 5 nanometers; the period is 1 -100 micro...

Embodiment 2

[0033] Embodiment 2: Preparation of c-plane GaN thick film substrate:

[0034] 1) The substrate is sapphire, silicon carbide, Si and other substrates, or GaN, AlN, InN or other III-nitride material films grown on sapphire, silicon carbide, Si and other substrates; Single-layer carbon nanotubes arranged in the vertical direction of the bottom reference side; the diameter of the carbon nanotubes is 1-100 nanometers, which is 5 nanometers in this embodiment; the period is 1-100 microns, preferably 1-10 microns, and 2 microns is used in this embodiment ;

[0035] 2) Use MBE growth technology to grow In 0.9 Ga 0.1 N material, composed of carbon nanotubes and In 0.9 Ga 0.1 N transition layer. In 0.9 Ga 0.1 The thickness of the N material is 10 nanometers to 500 nanometers, and 100 nanometers is used in this embodiment. The MBE growth temperature is 400-450 degrees, and 420 degrees is used in this embodiment.

[0036] 3) GaN material is grown using MOCVD growth technology. ...

Embodiment 3

[0040] Embodiment 3: Preparation of non-polar a-plane self-supporting GaN or thick film composite substrate:

[0041] 1) The substrate is r-plane sapphire, silicon carbide, Si and other substrates, or GaN, AlN, InN or other group III nitride material films grown on sapphire, silicon carbide, Si and other substrates; carbon nanotubes The arrangement is a parallel arrangement along the growth plane, and the arrangement can be isoperiodic or periodic disordered structure. The carbon nanotubes can be a single carbon nanotube, or a cluster of carbon nanotubes and other forms: this The embodiment selects the r-face sapphire substrate, and selects single-layer carbon nanotubes arranged along the vertical direction of the substrate reference edge with equal periods; the diameter of the carbon nanotubes is 1-100 nanometers, and this embodiment adopts 5 nanometers; the period is 1-100 nanometers. Micron, preferably 1-10 micron, the present embodiment adopts 2 micron;

[0042] 2) Using ...

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Abstract

The invention provides a method for manufacturing a GaN (gallium nitride) substrate, belonging to the manufacturing field of optoelectronic devices. The core different from the prior art, of the method is as follows: forming a transition layer on an epitaxial growth surface of the substrate (such as Si, sapphire, SiC and the like), wherein the transition layer is a InN layer with carbon nano tubes, a high-In-component InGAN layer or a GaAs layer; and growing a GaN thick film later to obtain a GaN thick film substrate or a self-supporting GaN substrate which is obtained by adopting a substrate-eliminating technology or a self-separating technology. The manufacturing method is simple, the technology conditions are easy to control, the price is low, different substrates can be selected, and a plurality of substrate separation technologies can be supported.

Description

technical field [0001] The invention relates to a preparation technology of a GaN substrate, which belongs to the field of preparation of optoelectronic devices. Background technique [0002] The lattice mismatch and thermal mismatch between the sapphire or silicon carbide substrates widely used at present and the GaN material are relatively large, resulting in a decline in the quality of the GaN material and its devices. The technology of preparing self-supporting GaN or composite thick-film GaN substrates by HVPE, MOCVD or MBE epitaxy has always been of great significance to GaN high-power LEDs, lasers and other high-performance optoelectronic devices. [0003] Due to the large lattice mismatch and thermal mismatch between substrates such as sapphire or silicon carbide and GaN materials, the preparation of GaN substrates has always been affected by large residual stress, bending or even cracking of epitaxial wafers and cannot be widely used. The current stress control met...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/20
Inventor 于彤军龙浩张国义吴洁君贾传宇杨志坚王新强
Owner PEKING UNIV
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