Preparation method for photoanode of dye-sensitized solar cell

A solar cell and dye sensitization technology, which is applied in the field of preparing dye-sensitized solar cells (DSSC) photoanodes, can solve the problems of disordered semiconductor crystal plane orientation and easy peeling off of semiconductor thin films, and achieve film formation conditions and easy thickness The effect of control, low preparation cost and high flatness

Inactive Publication Date: 2011-10-19
SOUTHEAST UNIV
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Technical problem: In order to solve the existing problems that the semiconductor thin film of the dye-sensitized solar cell prepared by the electrophoretic deposition method is easy to fall off, and the crystal plane orientation of the prepared semiconductor is disordered, etc., the invention provides a dye-sensitized solar cell light Anode preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for photoanode of dye-sensitized solar cell
  • Preparation method for photoanode of dye-sensitized solar cell
  • Preparation method for photoanode of dye-sensitized solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] SnO doped with fluorine 2 Conductive glass (SnO 2 : F, referred to as FTO) is the photoanode electrode base material, the base thickness is 2.2 mm, the visible light transmittance is 90%, and the surface sheet resistance is 14 Ω / □;

[0027] A layer of dense TiO with a thickness of about 50 nm was sputtered on the surface of FTO conductive glass by magnetron sputtering 2 layer as a barrier layer.

[0028] Mix isopropanol solution with TiO 2 After the particles are mixed, they are ultrasonically dispersed to make an electrophoretic fluid.

[0029] In a strong magnetic field, dense TiO is deposited by electrophoresis 2 barrier layer on the FTO conductive substrate.

[0030] The film prepared above was sintered in a muffle furnace at 450° C. for 30 minutes to increase the crystallinity of semiconductor nanoparticles.

[0031] Adsorbs dyes. The above electrode was heated at 80 °C for 20 minutes and then immersed in an ethanol solution of N3 dye (purchased...

Embodiment 2

[0037] The FTO conductive glass is used as the substrate material of the photoanode electrode, the thickness of the substrate is 2.2 mm, the visible light transmittance is 90%, and the surface sheet resistance is 14 Ω / □.

[0038] A layer of dense TiO with a thickness of about 200 nm was sputtered on the surface of FTO conductive glass by magnetron sputtering 2 layer as a barrier layer.

[0039] Mix isopropanol solution with TiO 2 After the particles are mixed, they are ultrasonically dispersed to make an electrophoretic fluid.

[0040] In a strong magnetic field, dense TiO is deposited by electrophoresis 2 barrier layer on the FTO conductive substrate.

[0041] The film prepared above was sintered in a muffle furnace at 450° C. for 30 minutes to increase the crystallinity of semiconductor nanoparticles.

[0042] Adsorbs dyes. The above electrode was heated at 80 °C for 20 minutes and then immersed in an ethanol solution of N719 dye (purchased by DYESOL, Austr...

Embodiment 3

[0048] The FTO conductive glass is used as the substrate material of the photoanode electrode, the thickness of the substrate is 2.2 mm, the visible light transmittance is 90%, and the surface sheet resistance is 14 Ω / □.

[0049] A layer of dense TiO with a thickness of about 300 nm was sputtered on the surface of FTO conductive glass by magnetron sputtering 2 layer as a barrier layer.

[0050] ethanol solution with TiO 2 After the particles are mixed, they are ultrasonically dispersed to make an electrophoretic fluid.

[0051] In a strong magnetic field, dense TiO is deposited by electrophoresis 2 barrier layer on the FTO conductive substrate.

[0052] The film prepared above was sintered in a muffle furnace at 450° C. for 30 minutes to increase the crystallinity of semiconductor nanoparticles.

[0053] Adsorbs dyes. The above electrode was heated at 80 °C for 20 minutes and then immersed in an ethanol solution of N3 dye (purchased by DYESOL, Australia) (the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
concentrationaaaaaaaaaa
concentrationaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method for a photoanode of a dye-sensitized solar cell. The preparation method comprises the following steps of: (1) taking fluorine-doped tin oxide (FTO) conductive glass as a substrate material of a photoanode electrode, wherein the thickness of a substrate is 2 to 3mm, the visible light transmission rate of the substrate is greater than 90 percent, and the surface square resistance of the substrate is 14 to 18 omega/square; (2) sputtering a compact semiconductor layer with the thickness of about 50 to 300nm on the surface of the FTO conductive glass to serve as a baffling layer by a magnetically-controlled sputtering method; (3) mixing an alcohol solution and semiconductor granules and dispersing the mixture by using ultrasonic to obtain an electrophoretic solution; and (4) depositing the electrophoretic solution on the FTO conductive substrate with the compact semiconductor layer by an electrophoresis method in a high magnetic field of 10 to 12T. By the method, an obtained semiconductor film does not have cracks, is formed quickly and has uniform and controllable depositing thickness within a relatively large range; and a semiconductor crystal has the advantages of relatively good crystal plane orientation and the like.

Description

[0001] technical field [0002] The invention belongs to a technology for preparing a dye-sensitized solar cell (DSSC) photoanode, in particular to a method for preparing a semiconductor nanocrystalline porous film photoanode under a magnetic field condition by using an electrophoretic deposition method. Background technique [0003] Nowadays, problems such as environmental pollution, greenhouse effect, and energy crisis are becoming more and more serious in the world. People's demand for renewable energy continues to increase. As a kind of green energy, solar energy has been widely concerned by people. Solar cells are one of the most efficient ways to harness solar energy. Dye-sensitized solar cells (DSSCs) show great promise as an inexpensive unconventional solar cell compared with conventional p–n junction solar cells. [0004] Most DSSC photoanodes are composed of a conductive glass substrate and a semiconductor thin film adsorbed with a dye sensitizer. There are man...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/04H01G9/20H01M14/00H01L51/48
CPCY02E10/542Y02E10/549
Inventor 孙岳明马艺文王育乔代云茜赵一凡齐齐
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products