Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chromium plate manufacturing process

A manufacturing process and chrome plate technology, applied in the field of chrome plate manufacturing technology, can solve problems such as chrome plate damage, and achieve the effects of high anti-static discharge damage and good pattern effect.

Active Publication Date: 2011-09-14
KELEAD PHOTOELECTRIC MATERIALS SHENZHEN
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention mainly solves the technical problem that the chrome plate of the photomask is easily damaged by electrostatic discharge during the production process, resulting in damage to the pattern integrity. The invention provides a chrome plate manufacturing process, and the chrome plate produced by the chrome plate manufacturing process can effectively prevent Static electricity, and effectively solve the problem of chromium plate being damaged by electrostatic discharge from the root

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chromium plate manufacturing process
  • Chromium plate manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] see figure 1 , is a schematic flow diagram of a preferred embodiment of the chrome plate manufacturing process of the present invention.

[0017] The chrome plate manufacturing process of the present invention comprises:

[0018] Step a, cleaning and drying the glass substrate;

[0019] In step b, the glass substrate is sputter-coated with a light-shielding layer in a vacuum chamber, wherein the transmission rate of the glass substrate is 0.25 m / min to 0.35 m / min, and the volume flow rate of argon gas is 80 ml / min to 200 m / min Standard condition ml / min, nitrogen volume flow rate is 180 standard condition ml / min to 320 standard condition ml / min, sputtering voltage is 250 volts to 650 volts, sputtering current is 1.2 amps to 3.5 amps;

[0020] Step c, return through the rotary chamber and sputter-coat the glass substrate with a light-absorbing layer, wherein the transmission rate of the glass substrate is 0.25 m / min to 0.35 m / min, and the volume flow rate of argon gas i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a chromium plate manufacturing process which comprises the following steps: step a, cleaning and drying a glass substrate; step b, sputtering and coating a shading layer on the glass substrate in a vacuum chamber; step c, returning through a rotation chamber, and sputtering and coating a light absorbing layer on the glass substrate; and step d, conducting constant temperature processing on the glass substrate. For the chromium plate manufacturing process, the parameters of the chromium plate manufacturing process are controlled, so that a chromium plate manufactured bythe invention has higher property of preventing the damage caused by the discharging of static electricity.

Description

technical field [0001] The invention relates to the field of photomasks, in particular to a chrome plate manufacturing process. Background technique [0002] As the pattern of semiconductor processing becomes finer and finer, the line width and distance of the pattern composed of metal chromium (Cr) on the chromium plate of the mask are also getting smaller and smaller, and the chromium is due to the manufacturing process, LCD (Liquid Crystal Display) exposure and A large amount of electric static charge exists on the chromium wire due to dry weather and other reasons. When these static charges are discharged, the chromium wire on the photomask will be peeled off or dissolved, destroying the integrity of the pattern. [0003] Especially in the production process of the photomask, a large amount of static electricity is generated when the LCD is exposed, and electrostatic discharge is easily formed, which will cause the chrome plate of the photomask to be damaged and destroy ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/58G03F1/08G03F1/00
Inventor 庄奎乾熊波石孟阳
Owner KELEAD PHOTOELECTRIC MATERIALS SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com