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SiO2: RE light-emitting film taking TiO2 nanotube array as carrier and preparation method thereof

A technology of nanotube array and luminescent thin film, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problem of low fluorescence efficiency, and achieve the effect of mild process conditions and simple use of equipment

Inactive Publication Date: 2013-01-23
NORTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] SiO 2 :RE luminescent film has a very small effective absorption cross-section of rare earth ions in silicon or silicon dioxide materials, resulting in low fluorescence efficiency. For this defect, at present, it is mainly achieved by adjusting the concentration of doping ions and changing the microstructure of the film itself. Improve its luminous efficiency, but because the luminescence of the film is not only determined by the characteristics of the film itself, but also closely related to the surface morphology and surface properties of the optical plane such as the substrate, such as a silicon wafer or a common glass slide, such an improvement technology exists certain limitations

Method used

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  • SiO2: RE light-emitting film taking TiO2 nanotube array as carrier and preparation method thereof
  • SiO2: RE light-emitting film taking TiO2 nanotube array as carrier and preparation method thereof
  • SiO2: RE light-emitting film taking TiO2 nanotube array as carrier and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] The preparation steps of this embodiment are:

[0060] Step 1, TiO 2 Preparation of nanotube array films:

[0061] (1) Put the titanium sheet whose size is length×width: 40mm×20mm in the acetone solution for ultrasonic cleaning and degreasing, and then clean it with deionized water;

[0062] (2) Put the cleaned titanium sheet into a hydrofluoric acid-nitric acid mixture for chemical polishing to remove the surface oxide film, where the volume ratio of hydrofluoric acid to nitric acid is 1:3;

[0063] (3) Put the chemically polished titanium sheet into absolute ethanol for ultrasonic cleaning;

[0064] (4) Use an aqueous ammonium chloride solution with a concentration of 0.3mol / L as the electrolyte, use a carbon rod (4cm×5cm×0.5cm in size) as the cathode, and use the titanium sheet treated in the above step (3) as the anode. Under the condition of a voltage of 26.6 volts, anodize for 2 minutes to obtain TiO 2 nanotube array films;

[0065] Step 2, preparation of lum...

Embodiment 2

[0077] The preparation steps of this embodiment are:

[0078] Step 1, TiO 2 Preparation of nanotube array films:

[0079] (1) Put the titanium sheet whose size is length×width: 40mm×20mm in an acetone solution for ultrasonic cleaning and degreasing for 5 minutes, and then wash it with deionized water;

[0080] (2) Put the cleaned titanium sheet into the hydrofluoric acid-nitric acid mixture solution for chemical polishing for 30 seconds, wherein the volume ratio of hydrofluoric acid to nitric acid is 1:3;

[0081] (3) Put the chemically polished titanium sheet into absolute ethanol for ultrasonic cleaning;

[0082] (4) Use an aqueous ammonium chloride solution with a concentration of 0.3mol / L as the electrolyte, use a carbon rod (4cm×5cm×0.5cm in size) as the cathode, and use the titanium sheet treated in the above step (3) as the anode. At a voltage of 13.7 volts, anodize for 2 minutes to obtain TiO 2 nanotube array films;

[0083] Step 2, preparation of luminescent film...

Embodiment 3

[0092] The preparation steps of this embodiment are:

[0093] Step 1, TiO 2 Preparation of nanotube array films:

[0094] (1) Put the titanium sheet whose size is length×width: 40mm×20mm in an acetone solution for ultrasonic cleaning and degreasing for 5 minutes, and then wash it with deionized water;

[0095] (2) Put the cleaned titanium sheet into the hydrofluoric acid-nitric acid mixed solution for chemical polishing for 30 seconds to remove the surface oxide film, wherein the volume ratio of hydrofluoric acid to nitric acid is 1:3;

[0096] (3) Put the chemically polished titanium sheet into absolute ethanol for ultrasonic cleaning;

[0097] (4) Use an aqueous ammonium chloride solution with a concentration of 0.1mol / L as the electrolyte, a carbon rod (4cm×5cm×0.5cm in size) as the cathode, and a titanium sheet treated in the above step (3) as the anode, Under the condition of a voltage of 21.6 volts, anodize for 2 minutes to obtain TiO 2 nanotube array films;

[0098...

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Abstract

The invention relates to a SiO2:RE light-emitting film taking a TiO2 nanotube array as a carrier and a preparation method thereof, belonging to the field of photoelectronic information materials. The substrate of the light-emitting film is a TiO2 nanotube array film. The light-emitting film has greatly improved light-emitting property as compared with the traditional SiO2:RE light-emitting film taking an optical plane such as a silicon wafer or a common glass slide as a carrier. The preparation method of the disclosed SiO2:RE light-emitting film taking a TiO2 nanotube array as a carrier mainly comprises the preparation of a TiO2 nanotube array film and the preparation of a light-emitting film, wherein the TiO2 nanotube array film is prepared by adopting an anodic oxidation method, and theprepared TiO2 nanotube array film has a better spool-shaped structure and provides a substrate beneficial to the improvement of the light-emitting property for the whole light-emitting film; and the preparation of the light-emitting film mainly includes the preparation of SiO2:RE sol and the preparation of a light-emitting film taking the TiO2 nanotube array as a carrier. The whole preparation method has mild process conditions and simple used equipment.

Description

technical field [0001] The invention belongs to the field of optoelectronic information materials, in particular to a TiO 2 Nanotube Arrays as Supported SiO 2 : RE luminescent thin film and its preparation method. Background technique [0002] SiO 2 :RE luminescent film has a very small effective absorption cross-section of rare earth ions in silicon or silicon dioxide materials, resulting in low fluorescence efficiency. For this defect, at present, it is mainly achieved by adjusting the concentration of doping ions and changing the microstructure of the film itself. Improve its luminous efficiency, but because the luminescence of the film is not only determined by the characteristics of the film itself, but also closely related to the surface morphology and surface properties of the optical plane such as the substrate, such as a silicon wafer or a common glass slide, such an improvement technology exists Certain limitations. Contents of the invention [0003] In view ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/79
Inventor 胡晓云樊君商毅博潘静苗慧王新刚
Owner NORTHWEST UNIV
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