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Photoresist peeling solution composition with metal protection

A photoresist and stripping solution technology, applied in the field of photoresist stripping solution composition, can solve the problems of low volatility, copper corrosion and the like, and achieve the effects of low volatility, low corrosion and obvious effect

Inactive Publication Date: 2011-08-03
SHANGHAI PHICHEM MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the corrosion problem of the existing stripper for metal, especially copper, and for the side corrosion protection of copper, the technical problem to be solved by the present invention is to develop a photoresist stripper composition with metal protection, the composition While maintaining excellent photoresist stripping performance, there is basically no corrosion to the copper base and aluminum base under the photoresist, and it has good copper side corrosion protection performance; at the same time, the stripping liquid composition has low volatility and low toxicity. Easy to clean, avoiding possible residues that may cause adverse effects on subsequent processes

Method used

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  • Photoresist peeling solution composition with metal protection
  • Photoresist peeling solution composition with metal protection
  • Photoresist peeling solution composition with metal protection

Examples

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Embodiment Construction

[0032] Below in conjunction with specific embodiment, further illustrate the present invention. These examples should be understood as only for illustrating the present invention but not for limiting the protection scope of the present invention. After reading the contents of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent changes and modifications also fall within the scope defined by the claims of the present invention.

[0033] The preparation process of the photoresist stripping solution in the following examples 1-13 and comparative examples 1-8 has no special feature, after weighing (A), (B), (C) and (D) by weight percentage, use Conventional technical means in the art can be mixed and dissolved.

[0034] 1. Stripping property of photoresist

[0035] Keep the photoresist stripping solution shown in the following Table 1 at a constant temperature of 90°C, dip a wafer covered with a ...

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Abstract

The invention discloses a photoresist peeling solution composition with metal protection. The photoresist peeling solution composition consists of the following substances in percentage by weight: 0.1 to 10 percent of quaternary ammonium hydroxide, 5 to 30 percent of water-soluble alkanol amine, 55 to 94.4 percent of water-soluble organic polar solvent and 0.5 to 5 percent of sugar alcohol additive, wherein the water-soluble organic polar solvent is sulfone, sulfoxide, amide or lactam solvent. Compared with the conventional peeling solution composition, the photoresist peeling solution composition has excellent corrosion resistance to a metal-based coating covered by photoresist, particularly copper and aluminum at the same time of ensuring excellent photoresist peeling performance, and has excellent side corrosion protection effect on the copper. Meanwhile, the peeling solution composition has low volatility and low toxicity, is easily cleaned by using deionized water, and has good maneuverability. The composition is used for peeling and dissolving a photoresist mask in a semiconductor element manufacturing process.

Description

technical field [0001] The invention relates to a novel photoresist stripping liquid composition, which is used for stripping and dissolving photoresist masks in the manufacturing process of semiconductor elements. Background technique [0002] Semiconductor elements have a large number of complex and extremely fine structures, which need to be manufactured through many stages of processes, among which the photolithography process needs to be repeated dozens to dozens of times. The photolithography process is generally as follows: the substrate is electroplated with a conductive metal film, and then evenly coated with photoresist. After exposure according to a given pattern, a developer is used to make the photoresist form a given circuit pattern, and then an etching solution is used to correct the conductive metal film. The metal film is etched to form a circuit, and finally the photoresist pattern is stripped off. [0003] There are mainly two types of photoresist strippi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 刘翘楚李海荣王寅生
Owner SHANGHAI PHICHEM MATERIAL CO LTD
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