Method for preparing plasma-oriented tungsten coating used in fusion reactor by using tungsten carbonyl as precursor
A plasma, carbonyl tungsten technology, applied in coatings, metal material coating processes, gaseous chemical plating, etc., can solve the problems of large residual stress, high reaction temperature, and high oxygen content in the coating, so as to solve the problem of residual stress. , The effect of low residual stress of coating and smooth surface of coating
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Embodiment 1
[0015] The CuCrZr alloy is processed into a sample size of 50mm × 50mm × 5mm. Before deposition, it was polished and polished with No. 150, No. 600, No. 800, No. 1000, and No. 1500 sandpaper in sequence, and then the deposition surface was degreased with acetone, ultrasonically cleaned with absolute ethanol, and dehydrated and dried. Put the sample on the heating seat of the reactor for deposition, the substrate temperature is controlled at 200°C, the reactor pressure is constant at 100Pa, the gas flow rate of tungsten carbonyl is 1.5mL / s and the temperature is controlled at 80°C, after deposition for 5h, keep warm for 3h for annealing .
Embodiment 2
[0017] The CuCrZr alloy is processed into a sample size of 50mm × 50mm × 5mm. Before deposition, it was polished and polished with No. 150, No. 600, No. 800, No. 1000, and No. 1500 sandpaper in sequence, and then the deposition surface was degreased with acetone, ultrasonically cleaned with absolute ethanol, and dehydrated and dried. Put the sample on the heating seat of the reactor for deposition, the substrate temperature is controlled at 300°C, the reactor pressure is constant at 150Pa, the gas flow rate of tungsten carbonyl is 2.0mL / s and the temperature is controlled at 80°C, after 6h of deposition, keep warm for 3h for annealing .
Embodiment 3
[0019] The CuCrZr alloy is processed into a sample size of 50mm × 50mm × 5mm. Before deposition, it was polished and polished with No. 150, No. 600, No. 800, No. 1000, and No. 1500 sandpaper in sequence, and then the deposition surface was degreased with acetone, ultrasonically cleaned with absolute ethanol, and dehydrated and dried. Put the sample on the heating seat of the reactor for deposition, the substrate temperature is controlled at 400°C, the reactor pressure is constant at 200Pa, the gas flow rate of tungsten carbonyl is 2.0mL / s and the temperature is controlled at 90°C, after 7h of deposition, keep warm for 4h for annealing .
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