Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Perovskite structure film with giant magneto-impedance effect and preparation method thereof

A technology of perovskite structure and giant magneto-impedance, applied in the application of magnetic film to substrate, magnetic layer, etc., can solve the problems of complex preparation process and expensive target material, and achieve simple preparation method, low cost and simple equipment Effect

Inactive Publication Date: 2011-07-27
北京鼎臣石墨科技有限公司
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As mentioned above, the preparation process of Co-based and Fe-based thin films with giant magneto-impedance effect is complicated, and the required target materials are relatively expensive.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite structure film with giant magneto-impedance effect and preparation method thereof
  • Perovskite structure film with giant magneto-impedance effect and preparation method thereof
  • Perovskite structure film with giant magneto-impedance effect and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] The invention provides a method for preparing a perovskite structure thin film with a giant magneto-impedance effect, the preparation method process is as follows image 3 As shown, it is realized through the following steps:

[0032] The first step is to determine the volume V of the film sol to be prepared and the concentration M of the substance, and then obtain the quantity n of the substance of the film sol to be prepared.

[0033] In the second step, according to the amount n of the thin film sol to be prepared, the amount of the required metal ion is obtained, and the organic alkoxide compound containing the required metal ion is used as a precursor, and the precursor is dissolved in the super Stir and dissolve in pure water to obtain a precursor solution; the volume of the ultrapure water is 1 / 4 of the volume of the thin film sol, ie 1 / 4V. The precursors are selected from lanthanum acetate and manganese acetate.

[0034] In the third step, methanol is added dr...

Embodiment 1

[0037] Example 1: Utilize the method provided by the invention to carry out LaMnO x Film preparation:

[0038] The first step is to determine that the film sol to be prepared is LaMnO x The sol has a volume V of 100 mL and a concentration of 0.25 mol / L.

[0039]The second step is to use an electronic scale to weigh the precursors as 8.57625g of lanthanum acetate and 6.127g of manganese acetate, and dissolve the lanthanum acetate and manganese acetate in ultrapure water at the same time to obtain the precursor solution. The volume of the ultrapure water is 1 / 4V=25mL.

[0040] In the third step, dropwise methanol into the precursor solution, after adding 20 mL of methanol, the precursor is completely dissolved to form a transparent sol solution.

[0041] In the fourth step, the prepared transparent sol solution is coated on the substrate by spin coating, and after pyrolysis and high-temperature sintering in a tubular constant temperature furnace, the required perovskite str...

Embodiment 2

[0047] Example 2: Utilize the preparation method provided by the invention to carry out LaMnO x / Ni / LaMnO x Film preparation:

[0048] figure 2 Schematic diagram of film preparation for the pulling method.

[0049] With the thin film sol of preparation in embodiment 1, by figure 2 The shown pulling method is carried out thin film preparation, specifically:

[0050] (1) Dipping: clamp the substrate 3 vertically in the clamp 4 of the puller, and dip the substrate 3 in the film sol. Adjust the parameters of the lifting machine: the ascending speed is 60mm / min, the descending speed is 40mm / min, the stroke is 30mm, and the intermediate waiting time is 5s.

[0051] (2) Pulling: After the adjustment is completed, run the pulling machine to coat the two sides of the Ni-W (W content is 5wt.%) substrate 3 with the thin film sol.

[0052] (3) Solvent evaporation: place the substrate 3 coated with thin film sol on a hollow ceramic plate, then put it into a tube-type constant tem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a perovskite structure film with the giant magneto-impedance effect and a preparation method thereof, which belongs to the technical field of magnetic material preparation. A manganese oxide of a LaMnOx perovskite structure is used as the film, wherein x is equal to or more than 3, and is equal to or less than 4; and the thickness of the film is 10-400nm. The preparation method for the film comprises the steps as follows: an organic alkoxide compound comprising all metal ions is used as a precursor; the precursor is dissolved into ultrapure water to be stirred and dissolved to obtain precursor solution; the precursor solution is gradually added into methanol dropwise until transparent sol solution is formed; the prepared transparent sol solution is coated on an underlay or coated on the underlay through a pulling method, and is pyrolyzed and sintered in a tubular constant-temperature furnace to prepare a required perovskite structure film. The preparation method is simple and is convenient to operate, requires simpler equipment, has low cost, can prepare films of larger areas, and can precisely control the concentration of the metal ions relative to other preparation methods.

Description

technical field [0001] The invention belongs to the technical field of magnetic material preparation, and in particular relates to a method for preparing a thin film with a high giant magneto-impedance effect. The method prepares a perovskite structure with a high giant magneto-impedance effect by controlling the sintering temperature and changing the thickness of the film. film. Background technique [0002] Natural perovskite (CaTiO 3 ) The composition of the structure is ABX 3 The composite compound named perovskite structure type compound. This type of structural material has been widely used in the fields of optics, electricity, magnetism, catalysis, and sensing ceramics. In the 1990s, it was discovered that manganese oxide with a perovskite structure has a giant magnetoresistance effect, and it has shown its talents in the application fields of magnetic sensors and magnetic recording. [0003] Magnetic sensors have always played an important role in modern technolo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/10H01F41/14
Inventor 王三胜郭恺
Owner 北京鼎臣石墨科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com