Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Storage element and storage device

A technology of storage elements and storage devices, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., can solve the problems of MRAM power consumption and other problems, and achieve the effects of improved resistance value retention performance, large capacity, and increased times

Active Publication Date: 2011-07-20
SONY CORP
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MRAM has problems with power consumption

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage element and storage device
  • Storage element and storage device
  • Storage element and storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0075] Specific examples of the present invention will be described below.

[0076] With respect to the memory cell array 20 and the memory element 10 in the above-mentioned embodiment, different samples were fabricated to study their properties.

[0077]

[0078] First, if figure 2 and image 3 As shown, a MOS transistor Tr is formed on a semiconductor substrate 11 . Next, an insulating layer is formed to cover the surface of the semiconductor substrate 11, the insulating layer being formed with via holes. After that, the via hole is filled with an electrode material W (tungsten) by CVD (Chemical Vapor Deposition), and the surface of the resulting via hole is ground by CMP (Chemical Mechanical Polishing). Thereafter, by repeating such processes, the plug layer 15, the metal wire layer 16, and the lower electrode 1 are formed, and then the lower electrode 1 is patterned according to the memory cell. The lower electrode 1 was formed such that its aperture portion had a d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a storage element and storage device, which can increase the number of times of repetitive operations and has an excellent balance between high-speed operating characteristics for writing and erasing and resistance value holding properties during high-speed operation. A storage layer (5) comprises an ion source layer (3). The ion source layer (3) contains an ion-conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element) and further contains Zr (zirconium), Cu (copper), and Al (aluminum) as metallic elements. The content of Alin the ion source layer (3) is 30 to 50 atomic%. The content of Zr is preferably 7.5 to 25 atomic%. Further, more preferably, the composition ratio of Zr to the total of the chalcogen elements contained in the ion source layer (= Zr (atomic%) / total of chalcogen elements (atomic%)) is in the range of 0.2 to 0.74.

Description

technical field [0001] The present invention relates to a memory element capable of storing binary information or multi-valued information including values ​​larger than binary in response to changes in electrical properties in a memory layer including an ion source layer. Background technique [0002] As a nonvolatile memory in which information is not erased even when the power is turned off, types such as flash memory, FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetoresistive Random Access Memory), and the like have previously been proposed. These types of memory are capable of retaining written information for long periods of time without power supply. However, each of these types of memory has its own advantages and disadvantages. In other words, flash memory has a higher packing density but has a disadvantage in terms of operating speed. FeRAM has limitations in terms of miniaturization to build higher packing densities, and also has problems in terms of man...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/10H01L45/00H01L49/00H10B69/00
CPCH01L45/146H01L45/1266H01L45/085H01L27/2472H01L45/1233H01L45/1633H01L27/2436H01L45/1625H10B63/82H10B63/30H10N70/245H10N70/8416H10N70/826H10N70/028H10N70/8833H10N70/026H10N70/20
Inventor 大场和博水口彻也保田周一郎
Owner SONY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com