Plasma processing apparatus, plasma processing method, and electronic device manufacturing method

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems of decreased processing speed, increased thermal influence, and deteriorated controllability of plasma processing, and achieves the effect of improving ignition rate

Active Publication Date: 2011-07-06
SHIBAURA MECHATRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] On the contrary, when the rising amount of the object to be processed is small, the heat influence from the heating unit provided on the mounting table may become stronger, and the object to be processed may be heated unnecessarily.
Moreover, since the distance between the object to be processed and the generated plasma is too far, the processing speed will decrease or the in-plane uniformity of the processing will deteriorate, which may also lead to the deterioration of the controllability of the plasma processing.

Method used

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  • Plasma processing apparatus, plasma processing method, and electronic device manufacturing method
  • Plasma processing apparatus, plasma processing method, and electronic device manufacturing method
  • Plasma processing apparatus, plasma processing method, and electronic device manufacturing method

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Embodiment Construction

[0020] Hereinafter, embodiments of the present invention will be illustrated with reference to the drawings. However, the same reference numerals are assigned to the same constituent elements in the respective drawings, and detailed descriptions are appropriately omitted.

[0021] figure 1 It is a schematic diagram for illustrating a plasma processing apparatus according to an embodiment of the present invention. Such as figure 1 As shown, a substantially cylindrical processing container 2 is provided in a plasma processing apparatus 1 . The processing container 2 can maintain an environment reduced in pressure compared to the atmosphere. Furthermore, the processing container 2 is formed of metal materials such as stainless steel and aluminum alloy.

[0022] An opening is provided in the upper portion of the processing container 2, and a dielectric window 3 is provided in the opening. The dielectric window 3 is formed of a dielectric material such as quartz glass or alumi...

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Abstract

A plasma processing apparatus is characterized by being provided with a process container capable of maintaining an atmosphere the pressure of which is reduced below the atmospheric pressure, an evacuation means for reducing the pressure in the process container to a predetermined pressure, a gas introducing means for introducing a process gas into the process container, a microwave introducing means for introducing a microwave into the process container, and a lifter pin for supporting an object to be processed on the end surface thereof, which is ascendably and descendably inserted into a mounting table provided in the process container, wherein when plasma is ignited by introducing the microwave, the object to be processed is supported at a first position near the upper surface of the mounting table by the lifter pin, and after the plasma is ignited, the object to be processed is supported at a second position remoter from the mounting table than the first position by the lifter pin. An improvement in plasma ignition rate can be achieved.

Description

technical field [0001] The invention relates to a plasma processing device, a plasma processing method and a manufacturing method of electronic equipment. Background technique [0002] The dry process using plasma has been effectively used in a wide range of technical fields such as the manufacture of electronic equipment, surface hardening of metal parts, surface activation of plastic parts, and chemical-free sterilization. For example, in the manufacture of electronic devices such as semiconductor devices and liquid crystal display devices, various plasma treatments such as ashing, dry etching, thin film deposition, and surface modification are performed. Since the dry process using plasma is low in cost, high in speed, and does not use chemicals, it is also advantageous in that it can reduce environmental pollution. [0003] Furthermore, various plasma processing apparatuses for performing the above-mentioned plasma processing have been proposed. A mounting table for pl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H05H1/46
CPCH01J37/32009H01J37/32192H01L21/67069H01L21/68742H01L21/3065H05H1/46
Inventor 新田秀幸细野卓凑壮史嘉濑庆久武藤真
Owner SHIBAURA MECHATRONICS CORP
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