Charge trapping type nonvolatile memory and manufacturing method thereof

Abstract

The invention discloses a charge trapping type nonvolatile memory and a manufacturing method thereof. The memory comprises a silicon substrate, a source conduction region, a drain conduction region, a tunneling dielectric layer, an HfAlO high-K material trapping dielectric layer with a tapered band structure, a control grid dielectric layer and a grid material layer, wherein the source conduction region and the drain conduction region are heavily doped on the silicon substrate; the tunneling dielectric layer is made of SiO2 materials and covers a current carrier channel arranged between the source conduction region and the drain conduction region; the HfAlO high-K material trapping dielectric layer with the tapered band structure covers the tunneling dielectric layer; the control grid dielectric layer is made of high-k Al2O3 materials and covers the trapping dielectric layer; and the grid material layer covers the control grid dielectric layer. By utilizing the charge trapping type nonvolatile memory, the charge retaining characteristic of the charge trapping type nonvolatile memory is effectively improved, the storage window is favorably enlarged, the erasing and writing speeds are increased, and the storage performance of the charge trapping type nonvolatile memory is improved comprehensively, thereby laying the foundation for further microminiaturizing devices.

Description

technical field [0001] The invention relates to the technical field of nanoelectronic devices and nanoprocessing, in particular to a charge-trapping non-volatile memory which uses a trapping medium layer with a gradually changing energy band structure to improve device performance and a manufacturing method thereof. Background technique [0002] The main feature of non-volatile memory is that it can keep the stored information for a long time without power on. It has the characteristics of read-only memory (ROM) and high access speed, and it is easy to erase and reset. Write, less power consumption. With the demand for large-capacity and low-power storage in multimedia applications and mobile communications, non-volatile memory, especially flash memory (Flash), occupies an increasing market share of semiconductor devices and has become a Very important memory type. [0003] The traditional Flash memory is a silicon-based non-volatile memory using a polysilicon thin film fl...

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Problems solved by technology

[0007] Aiming at the problem that the energy band structure of the trapping dielectric layer material in the existing charge trapping memory leads to poor device retention, the main purpose of the present invention is to provide a charge trapping nonvolatile memory and its manufacturing method to improve the charge trapping memory. charge retention characteristics of the device without sacrificing other aspects of device performance

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