Dyadic transition group metallic oxide non-volatilization electric resistance transition type memory

Abstract

The invention discloses a binary transition metal oxide nonvolatile resistance-transition memory based on ion implantation. The memory comprises an upper conductive electrode; a lower conductive electrode; a binary transition metal oxide film arranged between the upper conductive electrode and the lower conductive electrode, wherein ions are implanted in the binary transition metal oxide film. Thebinary transition metal oxide film with ions implanted therein can greatly improve the yield of the memory, increase the ratio of high resistance state to low resistance state of the device and reduce the discrete value of the resistance transition characteristics among the devices. The memory device has the advantages of simple structure, easy integration, and low cost, and is compatible to theconventional silicon planar CMOS process, which facilitates the extensive generalization and application of the memory.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices and memories, in particular to a binary transition metal oxide non-volatile resistance transition memory based on ion implantation. Background technique [0002] In recent years, the growth rate of memory in integrated circuits (IC) has surpassed that of logic circuits, and the proportion of memory in chip area has increased from 20% in 1999 to 71% in 2005. According to statistics in the fourth quarter of 2005, 47% of IC manufacturing capacity in the world is used for memory, while logic products only account for 29%. [0003] At present, my country's entire memory market accounts for nearly 40% of the semiconductor market, and is expected to reach 75.94 billion yuan in 2009. At the same time, affected by the explosive growth of the current 3C consumer electronics market, among various memory products, the fastest growing market demand is non-volatile memory (NVM). Flash memory (...

AI Technical Summary

Problems solved by technology

But one thing is certain, there is a strong relationship between the resistance transition characteristics and the defect states in binary transition metal oxide materials

[0013] Because the defect states formed by natural growth are difficult to control artificially, the yield of memory devices based on the resistance transition characteristics of binary transition metal oxide materials is not high, and the resistance transition characteristics are unstable.

Images