Method for performing low-temperature metal bonding on InGaAs and GaAs

Abstract

The invention discloses a method for performing low-temperature metal bonding on InGaAs and GaAs. The method comprises the following steps of: cleaning a single-side polished InGaAs epitaxial wafer to remove organic substances on the surface of the wafer; performing evaporation on the cleaned InGaAs epitaxial wafer to form a metal layer; performing photoresist etching on the InGaAs epitaxial wafer to obtain the InGaAs epitaxial wafer with a narrow metal strip; removing a photoresist on the surface of the InGaAs epitaxial wafer by plasma etching; cleaning a GaAs epitaxial wafer to remove organic substances on the surface of the wafer; attaching the cleaned GaAs epitaxial wafer to the InGaAs epitaxial wafer which is subjected to the plasma etching so as to obtain an attached wafer; oppositely arranging the attached wafer in a vacuum bonding machine for bonding and performing thermal treatment to remove vapor of a bonding interface; and thinning the bound wafer and corroding off the GaAs substrate of the bound wafer. By the method, the low-temperature metal bonding of the InGaAs and the GaAs is realized.

Description

technical field [0001] The invention relates to the technical field of growth of semiconductor heterojunction materials, in particular to a method for low-temperature metal bonding of InGaAs and GaAs, using a vacuum bonding machine to realize low-temperature III-V group materials, III-V group materials and Low-temperature metal bonding between materials such as Si (Ge, GaN). Background technique [0002] Optoelectronic devices are becoming more and more integrated and miniaturized. The technology of using bonding technology to bond heterojunction semiconductor materials together to prepare various semiconductor devices such as lasers and detectors has attracted more and more attention. This technology is to combine two wafers with flat and clean surfaces under certain conditions through chemical bonds on the surface, without being limited by the crystal lattice and crystal orientation of the two wafer materials. Using bonding technology to combine new structural materials h...

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Problems solved by technology

However, the first two have high requirements on experimental equipment and conditions, while the third party has low requirements on experimental equipment, but the bonding time is very long, and the requirements for operators are very high during the bonding process.

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