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Analysis method of boron and phosphor in Ga-doped CZ silicon rod and ingredients

An analysis method and silicon rod technology, applied in the direction of material resistance, can solve the problems of delaying analysis time and increasing costs, and achieve the effect of improving the process level and reducing the cost of quality identification

Inactive Publication Date: 2011-06-08
王正园
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Problems solved by technology

[0002] At present, in the production of gallium-doped CZ silicon rods, especially in the field of solar energy, there are often boron-containing silicon materials and phosphorus-containing silicon materials in the batching process. After the silicon rods are produced, if element analysis and testing are not carried out, the It is impossible to know the content of boron and phosphorus in raw materials, and the cost of elemental analysis is generally 2000-3000 yuan, and the cycle is about 1 week, which increases the cost of the quality identification of silicon materials and delays the analysis time

Method used

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  • Analysis method of boron and phosphor in Ga-doped CZ silicon rod and ingredients
  • Analysis method of boron and phosphor in Ga-doped CZ silicon rod and ingredients
  • Analysis method of boron and phosphor in Ga-doped CZ silicon rod and ingredients

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example 1

[0070] Production of monocrystalline silicon ingots with an average diameter of 157mm and a casting capacity of 65kg. The resistivity measured by the hanging shoulder is P-type 3Ω·CM, and 965mg of gallium is doped. After the silicon ingots are produced, the resistivity of the ingot head is P-type 2Ω. CM, at 1000mm ingot, the resistivity is P-type 2Ω CM:

[0071] According to the above method: to produce this silicon rod, the equivalent resistivity of phosphorus in the ingredients is 0.244Ω·CM, and the concentration is 2.43*10 16 / cm 3 , the equivalent resistivity of boron is 0.87Ω·CM, and the concentration is 1.74*10 16 / cm 3 , the resistivity at 500mm of the silicon rod is P-type 2.03Ω·CM, and the corresponding resistivity of boron at 600mm of the silicon rod is 0.99Ω·CM.

[0072] See figure 1 , 2 , 3, 4, 5.

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Abstract

Disclosed is an analysis method of boron and phosphor in Ga-doped CZ silicon rod and ingredients. In the method Ga doping concentrations at the head part of the silicon rod and at a certain length of the silicon rod, and doping concentrations at the head part of the CZ silicon rod and at a certain length of the CZ silicon rod when only boron and phosphor are considered are calculated first; boron and phosphor contents in Ga-doped CZ silicon rod ingredients are deduced by formulas (5) and (6), and converted to corresponding resistivity; and an excel data table is created. The invention is a necessary quality control method for Ga-doped solar grade CZ silicon single crystal. Through the invention, the production of solar energy silicon chip is controllable, and product quality and enterprise competitiveness are enhanced.

Description

technical field [0001] The invention relates to a method for analyzing boron and phosphorus in gallium-doped CZ silicon rods and ingredients. Background technique [0002] At present, when producing gallium-doped CZ silicon rods, especially in the field of solar energy, it often occurs that there are both boron-containing silicon materials and phosphorus-containing silicon materials in the batching process. After the silicon rods are produced, if elemental analysis and testing are not performed, the It is impossible to know the content of boron and phosphorus in raw materials, and the cost of elemental analysis is generally 2000-3000 yuan, and the cycle is about 1 week, which increases the cost of the quality identification of silicon materials and delays the analysis time. Contents of the invention [0003] The purpose of the present invention is to provide an analysis method capable of quickly analyzing the contents of boron and phosphorus in gallium-doped CZ silicon rod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04
Inventor 石坚
Owner 王正园
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