Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof

A multi-layer film and magnetic technology, applied in the direction of magnetic layer, static memory, digital memory information, etc., can solve the problems of low signal-to-noise ratio, high operating current density, etc., achieve high signal-to-noise ratio, low current density, and save energy Effect

Active Publication Date: 2011-05-25
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] Therefore, the object of the present invention is to provide a kind of magnetic multilayer film based on spin transfer torque (STT) effect and its magnetic logic element and magnetic random access memory, thereby overcome the operating current density that exists in the above-mentioned prior art. , the defect of relatively low signal-to-noise ratio

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  • Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof
  • Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof
  • Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof

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Embodiment Construction

[0046] According to one embodiment of the present invention, it is provided as figure 1 The magnetic multilayer film of the magnetic logic element shown, the magnetic multilayer film includes from bottom to top: the first antiferromagnetic layer AFM1 at the bottom; the first magnetic layer FM1 (hard magnetic layer) formed on the AFM1 layer); the first non-magnetic metal layer NM1 formed on the FM1 magnetic layer; the second magnetic layer FM2 (soft magnetic layer) formed on the first non-magnetic metal layer; formed on the first The tunnel barrier layer I1 on the two magnetic layers; the third magnetic layer FM3 (soft magnetic layer) formed on the first tunnel barrier layer; the second non-magnetic layer formed on the third magnetic layer A magnetic metal layer NM2; a fourth magnetic layer FM4 (hard magnetic layer) formed over the second nonmagnetic metal layer; a second antiferromagnetic layer AFM2 formed over the fourth magnetic layer. Among them, the magnetic layers FM1 an...

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Abstract

The invention discloses a magnetic multilayer film as well as a magnetic logic element and a magnetic random access memory thereof. The magnetic multilayer film disclosed by the invention comprises a first antiferromagnetic layer, a first hard magnetic layer, a first non-magnetic metal layer, a second soft magnetic layer, a tunnel barrier layer, a third soft magnetic layer, a second non-magnetic metal layer, a fourth hard magnetic layer and a second antiferromagnetic layer from bottom to top, wherein the third magnetic layer is set to be have a first critical current capable of turning over the magnetization direction of the third magnetic layer and the second magnetic layer is set to be have a second critical current capable of turning over the magnetization direction of the second magnetic layer, and the first critical current is not equal to the second critical current. The magnetic logic element and the magnetic random access memory based on the magnetic multilayer film disclosed by the invention have the advantages of higher read-write speed, relatively small current density required by read-write operation and low consumed power, and energy saving.

Description

technical field [0001] The invention belongs to the fields of magnetic logic and magnetic random access storage, and in particular relates to a magnetic multilayer film, a magnetic logic element and a magnetic random access storage. Background technique [0002] Since the giant magnetoresistance effect (Giant Magneto Resistance, GMR) was first observed by Baibich et al. . Since then, in 1995, Japanese scientist T. Miyazaki and American scientist J.S. Moodera observed tunneling magnetoresistance (Tunneling Magneto Resistance, TMR) ratios of 18% and 10% at room temperature respectively in the magnetic tunnel junction (MTJ), thereby uncovering the The prelude to the study of magnetic tunnel junctions. On the basis of subsequent related research findings, the researchers designed a device model of a new type of Magnetic Random Access Memory (MRAM) based on the GMR effect and the magnetic tunnel junction. This device has excellent new characteristics , such as radiation resist...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/08H03K19/168G11C11/15
CPCG11C11/161
Inventor 梁世恒刘东屏温振超韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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