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Binode solar battery and preparation method thereof

A technology of solar cells and batteries, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of prolonging battery life, optimizing design, and solving transportation problems

Inactive Publication Date: 2011-05-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] However, crystalline Si is an indirect bandgap semiconductor material, its bandgap width is 1.12eV, the absorption edge wavelength corresponding to this bandgap is 1.107μm, the absorption coefficient is 2.78 / cm, and the absorption distance is 3.597mm, while the electron-hole pair The diffusion length is only 200 microns

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  • Binode solar battery and preparation method thereof
  • Binode solar battery and preparation method thereof
  • Binode solar battery and preparation method thereof

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Embodiment Construction

[0061] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0062] The present invention combines the absorption of shallow junctions on surface photogenerated electrons-holes with the structure of back junctions on infrared photogenerated electrons-holes, so as to avoid their respective shortcomings, improve the conversion efficiency of Si solar cells in the infrared spectrum, and avoid Reduced life due to static electricity. The realization principle of the present invention mainly relates to following three aspects:

[0063] 1), double junction battery

[0064] A pn junction is prepared on the upper and lower sides of the Si substrate, that is, a pn junction is prepared on the light-facing side of the Si substrate, especially a broadband junction, to absorb light of shorter wa...

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Abstract

The invention discloses a binode solar battery and a preparation method thereof. The binode solar battery comprises a first conduction type substrate; a light-receiving surface second conduction type layer and a medium passivation layer which are sequentially arranged on the light-receiving surface of the first conduction type substrate, wherein the surface of the medium passivation layer is a matte surface; a back light surface second conduction type area and a back light surface first conduction type area which are alternately formed on the back light surface of the first conduction type substrate; a first electrode which is formed on the light-receiving surface second conduction type layer; a second electrode which is formed on the back light surface second conduction type area; a third electrode which is formed on the back light surface first conduction type area; and a back light surface insulating medium layer which is formed between the second electrode and the third electrode. By adopting the invention, the contradiction between sufficient light absorption and limited diffusion distance of a small amount of current carriers is avoided, and the inconsistent contradiction between the light absorbing area and the current carrier collecting area of back contact battery is avoided, thereby improving the battery efficiency.

Description

technical field [0001] The invention relates to the technical field of Si optoelectronics, in particular to a double-junction solar cell and a preparation method thereof. Background technique [0002] Silicon solar cells are the main body in today's photovoltaic market, and crystalline silicon solar cells have the highest conversion efficiency. The photoelectric conversion efficiency of its products has reached 17%, mainly through the shallow junction to absorb photogenerated electron-hole pairs on the Si surface. The minority carrier pairs in the photogenerated electron-holes absorbed inside the substrate are promoted to diffuse to the shallow junction by the back electric field. [0003] However, crystalline Si is an indirect bandgap semiconductor material, its bandgap width is 1.12eV, the absorption edge wavelength corresponding to this bandgap is 1.107μm, the absorption coefficient is 2.78 / cm, and the absorption distance is 3.597mm, while the electron-hole pair The diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/06H01L31/0352H01L31/18
CPCY02E10/50Y02P70/50
Inventor 韩培德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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