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Fast recovery diode

A fast recovery, diode technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of strong changes in leakage current and high leakage current of diodes

Active Publication Date: 2011-05-11
HITACHI ENERGY LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, leakage current is high in a diode having such a defect layer 45 and the amount of leakage current varies strongly with the position of the peak of the defect layer
[0003] The device cannot be operated above 125°C due to high leakage

Method used

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Embodiment Construction

[0026] Further description will be made using the first conductivity type as the n-type and the second conductivity type as the p-type, but alternatively the conductivity type can also be reversed.

[0027] Picture 12 An inventive fast recovery diode 1 is shown that includes a wafer 20. The portion of the wafer with unmodified doping during the manufacturing process forms a base layer 2 of the first conductivity type (ie, n-type), which has a cathode side 23 and the anode side 24 on the opposite side of the cathode side 23. On the cathode side 23, an n-doped cathode buffer layer 22 may be provided. In the case where the diode 1 has such a cathode buffer layer 22, this layer has a higher doping than the (n-)doped base layer 2. The metal layer as the cathode electrode 3 is provided on top of the cathode buffer layer 22 on the side opposite to the base layer 2.

[0028] The metal layer as the anode electrode 4 is provided on the anode side of the wafer 20. The p-doped anode contac...

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Abstract

A fast recovery diode (1) is provided, which comprises a base layer (2) of a first conductivity type with a cathode side (23) and an anode side (24) opposite the cathode side (23). An anode buffer layer (41) of a second conductivity type with a first depth (410) and a first maximum doping concentration is arranged on the anode side (24). An anode contact layer (42) of the second conductivity type with a second depth (420), which is lower than the first depth (410), and a second maximum doping concentration, which is higher than the first maximum doping concentration, is also arranged on the anode side (24). A space charge region of the anode junction at breakdown voltage is located in a third depth (430) between the first and the second depth (410, 420). Between the second and the third depth (420, 430), there is a defect layer (43) with a defect peak arranged.

Description

Technical field [0001] The present invention relates to the field of power electronic devices, and more particularly to fast recovery diodes and methods for manufacturing such fast recovery diodes. Background technique [0002] As shown in FIG. 1, the prior art diode 10 includes an n-doped base layer 2 having a cathode side 23 and an anode side 24 on the opposite side of the cathode side 23. On the anode side 24, a p-doped anode layer 25 is provided and on top of the p-doped anode layer 25, a metal layer that functions as the anode electrode 4 is provided. On the cathode side 23, a higher (n+) doped cathode buffer layer 22 is provided. A metal layer in the form of the cathode electrode 3 is provided on top of this (n+) doped cathode buffer layer 22. On the anode side 24, there is a defect center (typically formed by hydrogen or helium irradiation) disposed near the junction in the p-doped anode layer 25. Due to the defective layer 45, the reverse recovery current is reduced an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/36H01L21/329
CPCH01L29/861H01L29/32H01L29/66136
Inventor J·沃贝基A·科普塔M·卡马拉塔
Owner HITACHI ENERGY LTD
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