Flip-chip LED chip structure and manufacturing method thereof

Abstract

The invention discloses a flip-chip LED chip structure and a manufacturing method thereof. The LED chip comprises an epitaxial layer taking sapphire as substrate and an electrode layer taking SiO2 / Si as substrate; holes of periodical structure are etched on the front surface of the sapphire substrate, and random patterns are etched on the back surface; a growth buffer layer, an n type GaN layer (n-GaN), an MQWs (multi quantum wells) layer and a p type GaN layer (p-GaN) are successively grown on the sapphire substrate etched with holes as the epitaxial layer; one or more negative electrode grooves are etched on the p type GaN layer (p-GaN); a p type contact layer is sputtered on the p type GaN layer (p-GaN); an n type ohmic contact layer is electroplated on the n type GaN layer (n-GaN) exposed after etching; titanium (Ti), platinum (Pt) and aurum (Au) are successively deposited on the SiO2 / Si substrate as an electrode layer; the electrode distribution on the electrode layer is coincident with that on the etched epitaxial layer; and the LED chip is formed by bonding the epitaxial layer on the front surface of the sapphire substrate and the electrode layer on the SiO2 / Si substrate with Au solder. The structure has the advantages of stable performance, high utilization rate of electric energy and long service life.

Description

technical field [0001] The invention relates to the technical field of light-emitting diode chips, in particular to a flip-chip soldered LED chip structure and a manufacturing method thereof. [0002] Background technique [0003] Under the urging of the global energy crisis, various energy-saving optoelectronic devices have emerged as the times require. Light-emitting diodes (LEDs), relying on their low energy consumption, no pollution, and long life, have gradually become the third-generation light source after incandescent lamps and fluorescent lamps. White LED lighting has low power consumption, which is 20% of incandescent lamps with the same lighting brightness and 50% of fluorescent lamps. It has unique advantages such as energy saving, environmental protection and green lighting. [0004] Although LED chips have been commercialized, the problem of low light extraction efficiency of LED chips has not been well resolved so far. At present, the luminous efficacy of c...

AI Technical Summary

Problems solved by technology

[0008] This method has the following problems: Although ITO is transparent, it also has a certain reflection; because the electrode is made on the surface of the light exit, the light exit area is reduced; the production of the n-type electrode needs to etch a certain area The multi-quantum well layer reduces the light-generating area and generally affects the light-exit efficiency, close to offsetting the light-exit effect produced by roughening

[0012] This method has the following problems: the epitaxial layer structure may be damaged during peeling; this peeling method requires relatively high precision equipment; the above structure requires electrodes to be made on the n-GaN surface, which reduces the light output area ; Since the light exits from the n-GaN surface, a part of the light will be incident on the p-GaN layer, resulting in serious light loss

Images