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Method for processing fragile material substrate

A technology of brittle material substrates and processing methods, applied in stone processing equipment, stone processing tools, metal processing equipment, etc., can solve problems such as narrow process tolerances, achieve wide process tolerances, reduce the uncontrollable direction of travel, and easily break The effect of processing

Inactive Publication Date: 2011-04-20
MITSUBOSHI DIAMOND IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, when the thickness of the glass substrate is thinner than when it is thicker, it is more likely to become a full cutting line, and the process tolerance of the processing conditions that can form the scribing line is narrower.

Method used

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  • Method for processing fragile material substrate
  • Method for processing fragile material substrate
  • Method for processing fragile material substrate

Examples

Experimental program
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Effect test

Embodiment Construction

[0060] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0061] First, an example of a substrate processing apparatus used for carrying out the processing method of the present invention will be described.

[0062] figure 1 It is a schematic configuration diagram of a substrate processing apparatus LS1 capable of implementing the processing method of the present invention. Here, the case of processing a glass substrate will be described as an example, but the same applies to substrates made of brittle materials such as silicon substrates.

[0063] First, the overall configuration of the substrate processing apparatus LS1 will be described. There is a pair of guide rails 3, 4 arranged in parallel on the horizontal stand 1. figure 1 The slide table 2 reciprocates in the front-back direction of the paper (hereinafter referred to as the Y direction). And it is formed as follows: between the two guide rails 3, 4, a lead screw 5 is di...

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PUM

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Abstract

Provided is a method for processing a fragile material substrate that can carry out stable laser break processing. A method for processing a fragile material substrate comprises (a) an initial crack forming step of forming an initial crack on a scribe scheduled line adjacent to the edge of a first substrate, (b) a laser scribe step of relatively moving a beam spot of the first laser irradiation from the edge of the first substrate to the edge of a second substrate along the scribe scheduled line to heat the substrates, immediately cooling a portion where the beam spot has passed, and forming a scribe line with a limited depth along the scribe scheduled line by using a stress gradient in the depth direction caused in the scribe scheduled line, and (c) a laser break step of relatively moving a beam spot of the second laser irradiation from the edge of the second substrate to the edge of a first substrate along the scribe line in the reverse direction to make the scribe line penetrate further deeply or completely cuts off the scribe line.

Description

technical field [0001] The present invention relates to a processing method of a brittle material substrate. More specifically, it irradiates the first laser (that is, laser) beam along the predetermined scribing line set on the substrate to form a finite-depth laser beam on the substrate. The scribed line formed by the crack is irradiated with the second laser beam to penetrate deeply or completely break the scribed line. [0002] The brittle material substrate here refers to glass substrates, ceramics of sintered materials, single crystal silicon, semiconductor wafers, sapphire substrates, ceramic substrates, and the like. Background technique [0003] If the laser scribing method is used to irradiate a brittle material substrate such as a glass substrate with a laser beam, scan the beam spot formed on the substrate to heat it in a linear manner, and then spray a refrigerant immediately after heating to cool it, it is possible to make the chip Chip generation is reduced c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B33/09B23K26/00B23K26/38B28D5/00B23K26/364B23K26/40
CPCC03B33/107B28D1/225B28D1/221C03B33/07C03B33/091B23K26/4075B23K26/40B23K2103/50
Inventor 井村淳史福原健司山本幸司
Owner MITSUBOSHI DIAMOND IND CO LTD
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