Protection device and method for semiconductor apparatus

Abstract

The invention provides a protection device for a semiconductor apparatus, which comprises a transistor, a first pad connected to the grid of the transistor, and a switch element and a diode in turn connected between the ground and the join point of the first pad and the grid of the transistor. The protection device of the invention can be used for protecting the semiconductor apparatus, particularly for preventing MOS transistor from being damaged by plasma in the manufacturing process and for testing the MOS elements under reverse mode and accumulating mode.

Description

technical field [0001] The present invention relates to semiconductor devices, in particular to a circuit protection device for protecting semiconductor devices from plasma damage (PID). Background technique [0002] As the semiconductor manufacturing process enters the deep submicron stage, the plasma process has become an increasingly widely used process technology. Plasma technology is mainly used in the fields of ultraviolet lithography, plasma etching and ion implantation. However, due to the operation of plasma in the manufacturing process of semiconductor devices, plasma damage inevitably occurs. Plasma damage can damage semiconductor devices, especially the gate oxide layer and device characteristics of MOS devices, resulting in reduced device performance. For example, the threshold voltage of the MOS device drifts, and the breakdown charge and breakdown voltage of the gate oxide film change, resulting in the transition of minority carriers in the conductive channe...

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Problems solved by technology

Due to the existence of the protection diode, when a negative voltage is applied to the gate of the NMOS transistor (that is, the accumulation mode), the applied negative voltage will be released to the ground through the protection diode 102, so the NMOS transistor in the accumulation mode cannot be measured

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