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Method for synthesizing graphene film material

A graphene film and film material technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of difficult realization of the production process of graphene film, harsh reaction conditions, etc., to achieve low cost, The effect of simple preparation method

Active Publication Date: 2011-04-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

All of the above methods can prepare graphene film materials, but the reaction conditions are relatively harsh, especially the strict requirements on vacuum degree and cooling rate, which make the production process of graphene film very difficult to realize.

Method used

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  • Method for synthesizing graphene film material
  • Method for synthesizing graphene film material
  • Method for synthesizing graphene film material

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Follow the preparation process. First, the copper substrate was soaked in acetic acid at a constant temperature of 35°C for 10 minutes, and then quickly put into a chemical vapor deposition tube furnace. Use a vacuum pump to pump the reaction tube furnace to less than 10 Pa, and then feed hydrogen gas with a flow rate of 30 sccm. When the pressure inside the tube is stabilized to about 230 Pa, start to heat up from room temperature at a rate of about 10°C / min. After rising to 120°C Keep warm for 10 minutes, continue to use the same heating rate to rise to 1000°C, start to pass methane, the flow rate is 100sccm, and the pressure is kept at about 10000Pa. Keep the temperature constant for 30 minutes, stop heating, and let the furnace body cool down naturally. When the temperature drops to 700°C, open the heating furnace box and quickly drop to room temperature. Take out the copper substrate on which the graphene film has grown and place it flat on the oxidized silicon su...

Embodiment 2

[0036] Follow the preparation process. First, the copper substrate was soaked in acetic acid at a constant temperature of 35°C for 10 minutes, and then quickly put into a chemical vapor deposition tube furnace. Use a vacuum pump to pump the reaction tube furnace to less than 10 Pa, and then feed hydrogen gas with a flow rate of 40 sccm. When the pressure inside the tube is stabilized to about 800 Pa, start to heat up from room temperature at a rate of about 10°C / min. After rising to 120°C Keep warm for 10 minutes, continue to use the same heating rate to rise to 1000 ° C, start to pass methane, the flow rate is 100 sccm, and the pressure is maintained at about 20000 Pa. Keep the temperature constant for 30 minutes, stop heating, and let the furnace body cool down naturally. When the temperature drops to 700°C, open the heating furnace box and quickly drop to room temperature. Take out the copper substrate on which the graphene film has grown and place it flat on the oxidized ...

Embodiment 3

[0038] Follow the preparation process. First, the copper substrate was soaked in acetic acid at a constant temperature of 35°C for 10 minutes, and then quickly put into a chemical vapor deposition tube furnace. Use a vacuum pump to pump the reaction tube furnace to less than 10 Pa, and then feed hydrogen gas with a flow rate of 50 sccm. When the pressure inside the tube is stabilized to about 1000 Pa, start to heat up from room temperature at a rate of about 10°C / min. After rising to 120°C Keep warm for 10 minutes, continue to use the same heating rate to rise to 1000°C, start to pass methane, the flow rate is 100 sccm, and the pressure is kept at about 40000Pa. Keep the temperature constant for 30 minutes, stop heating, and let the furnace body cool down naturally. When the temperature drops to 700°C, open the heating furnace box and quickly drop to room temperature. Take out the copper substrate on which the graphene film has grown and place it flat on the oxidized silicon ...

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Abstract

The invention discloses a method for synthesizing a graphene film material, comprising the following steps: a grapheme film is grown on a copper substrate under mixed atmosphere of hydrogen and methane by using a chemical vapor deposition method; then the copper substrate grown with the grapheme film is placed flatly on a silicon substrate with the oxidized surface, the obtained silicon substrateis placed into a ferric nitrate solution, the copper substrate is dissolved, and at the moment, the graphene film is deposited on the silicon substrate; then, the solution is diluted, then the silicon substrate deposited with the grapheme is taken out of the solution, and is dried in a vacuum drying oven; and after ultrasonic cleaning is carried out on the silicon substrate deposited with the graphene, and the obtained silicon substrate is placed in an annealing furnace communicated with argon for protection to anneal, thus a high-quality grapheme sample is prepared. By utilizing the method for synthesizing the graphene film material, the original complex steps needed for preparing the graphene film are simplified, a toxic agent needed by a chemical method is avoided, and the production efficiency of the graphene film is improved, thus by measurement of a Raman spectrometer, the prepared graphene film is proved to have good performances and excellent reliability.

Description

technical field [0001] The invention relates to a method for preparing a film material, in particular to a method for synthesizing a high-quality graphene film material. Background technique [0002] Graphene is a two-dimensional material that can exist under natural conditions—single-layer graphite, which was discovered by the research team of Professor A.K.Geim of the University of Manchester in 2004 by mechanically exfoliating graphite. The emergence of this material breaks the conclusion that physicists have long believed that "due to thermal instability, there are no two-dimensional materials in nature", and it also opens up a broad research world for the scientific community. Graphene has become a hot topic of research among physicists, chemists, and materials scientists. During the research process, scientists discovered some peculiar properties of graphene, such as zero internal electronic rest mass, direct zero band gap, quantum Hall effect, high carrier mobility, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02C23C16/26
Inventor 蒋建中于文彦张鑫张凌泓
Owner ZHEJIANG UNIV
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