High-sensitivity uncooled infrared detector
An uncooled infrared and detector technology, applied in the field of infrared detectors, can solve the problems of increased cost, complex process, thermal isolation of detectors and unreasonable infrared absorption layer structure design, etc., and achieves good stability, reliability, cost and so on. The effect of low and simple preparation process
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[0029] The following will be combined figure 1 , to express the specific implementation method of the present invention:
[0030] (1) A polyester film with a thickness of 2.5 microns is selected as the substrate (see figure 1 Medium 1).
[0031] (2) Bottom electrode preparation, evaporate one deck metal aluminum film on substrate film as bottom electrode, and electrode is bar shape, and width is 0.5 millimeter, and thickness 70 nanometers, (see figure 1 Medium 2).
[0032] (3) P(VDF-TrFE) thin film preparation, the P(VDF-TrFE) thin film material is grown on the polyester film substrate with the bottom electrode prepared using the Langmuir-Blodgett (LB) technique. Specifically, weigh 0.02 g of P(VDF-TrFE, 70:30mol%), transfer to a 250 ml flask, add 100 ml of dimethyl sulfoxide (DMSO), stir at 80°C for 3 hours, and cool to room temperature . The LB thin film growth system is used to grow P(VDF-TrFE) polymer film. The single-layer film is pulled under the surface pressure of...
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