Consumption type N-type lateral double-diffusion metal-oxide semiconductor for reducing voltage

Abstract

The invention relates to a consumption type N-type lateral double-diffusion metal-oxide semiconductor for reducing voltage, which comprises a P-type semiconductor substrate, wherein an N-type buried layer, a P-type well region, an N-type well region and an N-type drift region are arranged on the P-type semiconductor substrate; a P-type contact region, an N-type source region and an N-type channelinjection region are arranged near the left side of the surface of the P-type well region; a P-type injection region is arranged in the P-type well region; the left end boundary of the P-type injection region is arranged below the N-type source region; the right end boundary of the P-type injection region is adjacent to the N-type drift region on a drain terminal; and the P-type contact region and a polycrystalline silicon electrode are connected through an interconnection metal cable to be used as a grid. The structure of the invention greatly reduces the threshold voltage of the consumptiontype N-type lateral double-diffusion metal-oxide semiconductor; a metal cable of a drain is directly connected to a high-voltage power supply in circuit application; the metal cable of the grid is grounded; and the metal cable of the drain is directly connected to a low-voltage circuit so as to provide a low-voltage power supply for the low-voltage circuit.

Description

Technical field [0001] The invention relates to the field of power semiconductor devices, and more specifically, to a new structure of a fully isolated depletion type high voltage N-type lateral double diffused metal oxide semiconductor tube suitable for a step-down circuit. Background technique [0002] Power semiconductor devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronic technology has opened up a wide range of applications for semiconductor power devices. Modern power electronic devices and related products represented by horizontal double-diffusion metal oxide semiconductor transistors are playing an increasingly important role in power-using occasions such as industry, energy, and transportation. They are electromechanical integration equipment, new energy technology, space and ocean Technology, office automation, and household appliances to achieve high-performance, high-...

AI Technical Summary

Problems solved by technology

[0004] In related technologies, few people pay attention to depletion-type high-voltage lateral double-diffused metal-oxide-semiconductor transistors. The threshold voltage of traditional depletion-type high-voltage lateral double-diffused metal-oxide semiconductor transistors only depends on the polysilicon gate to deplete the channel implantation region. However, due to the limitation of the depletion capacity, the threshold voltage of the depletion of the traditional structure is distributed between -1 and -3V. Finally, the low-voltage power supply obtained after the depletion is stepped down cannot drive the low-voltage part of the circuit, or after satisfying the voltage drive, In order to achieve a certain driving current, the consumption area must be increased

[0005] In addition, in the step-down circuit, the junction field effect transistor can well meet the system requirements, but due to the consideration of bipolar transistors, metal oxide semiconductor transistors and high-voltage double-diffused metal oxide semiconductor transistors in the BCD process The compromise relationship between devices, the junction field effect transistor manufactured with parasitic structure has poor performance, low breakdown voltage and small current capability

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