Consumption type N-type lateral double-diffusion metal-oxide semiconductor for reducing voltage
An oxide semiconductor and lateral double-diffusion technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of small current capacity, low breakdown voltage, and increased consumption area, achieving compatibility of preparation processes and enhancing freedom performance, the effect of simple circuit structure
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[0021] Reference image 3 , A depletion type N-type lateral double diffused metal oxide semiconductor transistor for step-down, comprising: a P-type semiconductor substrate 1, an N-type buried layer 2 is provided on the P-type semiconductor substrate 1, and an N-type buried layer 2 is provided with a P-type well region 3, on the left and right sides of the P-type well region 3 are respectively provided with a first N-type well region 4 and a second N-type well region 19 forming a PN junction isolation, in the first N-type well The region 4 is provided with a first N-type ohmic contact region 21, a second N-type ohmic contact region 22 is provided on the second N-type well region 19, and a drain terminal N-type drift is provided on the right side of the surface of the P-type well region 3. Zone 6, N-type drain region 10 is provided on the surface of drain N-type drift region 6, and P-type contact region 7, N-type source region 8 and N-type channel implantation region are provided...
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Abstract
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