Thermal protect pcram structure and methods for making

Abstract

A memory cell as described herein includes a conductive contact and a memory element comprising programmable resistance memory material overlying the conductive contact. An insulator element extends from the conductive contact into the memory element, the insulator element having proximal and distal ends and an inside surface defining an interior. The proximal end is adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end. The memory element is within the interior extending downwardly from the distal end to contact a top surface of the bottom electrode at a first contact surface. A top electrode can be separated from the distal end of the insulator element by the memory element and contact the memory element at a second contact surface having a surface area greater than that of the first contact surface.

Description

technical field [0001] The present invention relates to a memory device based on a phase-change memory material and a manufacturing method thereof. The phase-change memory material includes a chalcogen compound material, or other programmable resistance material. Background technique [0002] Phase change memory materials, such as chalcogenide-based materials and the like, can be changed between amorphous and crystalline states by applying a current at a level suitable for integrated circuit implementation. The generally amorphous state is characterized by a higher resistivity than the generally crystalline state, which can be easily sensed to indicate data. These properties are of interest in the use of programmable resistive materials to form non-volatile memory circuits that can be read and written randomly. [0003] The change from amorphous to crystalline state is generally a lower current operation in which the current heats the phase change material above the transit...

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Problems solved by technology

[0009] In addition, higher current levels can cause problems like localized heating, which is sufficient to cause diffusion / reaction of electrodes and phase change materials, and / or cause compositional changes of phase change materials in the active region, which leads to degradation of resistive switching performance and the failure of the storage unit may

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