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Mass production method of zinc oxide nanowires

A zinc oxide nanowire, mass production technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of lack of technology, inability to be practical in large quantities, and devices staying in the laboratory stage, and achieve the effect of simple equipment requirements

Inactive Publication Date: 2011-01-12
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the lack of large-scale preparation of ZnO nanowires, devices based on ZnO nanowires still remain in the laboratory stage and cannot be used in large quantities.

Method used

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  • Mass production method of zinc oxide nanowires
  • Mass production method of zinc oxide nanowires
  • Mass production method of zinc oxide nanowires

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Fully mix high-purity zinc oxide powder and activated carbon with a mass ratio of 1:1, then ball mill for 15 hours under the protection of high-purity nitrogen, put the ball-milled materials in a ceramic boat, and then put the ceramic boat with materials in in a tube furnace. Then the tube furnace is fed with a carrier gas consisting of high-purity nitrogen (99.999%) and high-purity oxygen (99.999%) (high-purity oxygen flow: 20ml / min, high-purity nitrogen flow: 2L / min), And quickly heat up to 950 ℃ Finally, react for 35 minutes, and a large amount of white cotton-like zinc oxide nanowires can be sprayed out at the tube furnace mouth during the reaction. , the scanning electron micrograph of the material is attached image 3 .

[0020] from figure 1 It can be seen that the ZnO nanowires prepared in large quantities by this method are consistent with the standard map ZnO JCPDS 65-3411.

Embodiment 2

[0022] Fully mix high-purity zinc powder and bamboo charcoal with a mass ratio of 0.5:1.5, then ball mill for 6 hours under the protection of high-purity argon, put the ball-milled materials in a quartz boat, and then put the ceramic boat with materials in in a tube furnace. Then the tube furnace is fed with a carrier gas consisting of a mixture of high-purity nitrogen (99.999%) and high-purity oxygen (99.999%) (high-purity oxygen flow: 1ml / min, high-purity nitrogen flow: 1L / min), And quickly heat up to 800 ℃ Finally, react for 10 minutes, and a large amount of white cotton-like zinc oxide nanowires can be sprayed out at the tube furnace mouth during the reaction. , the scanning electron micrograph of the material is attached Figure 4 .

Embodiment 3

[0024] Fully mix high-purity zinc carbonate powder and carbon fiber with a mass ratio of 1.5:0.5, then ball mill for 24 hours under the protection of high-purity nitrogen, put the ball-milled material in a quartz boat, and then put the ceramic boat with the material in in a tube furnace. Then the tube furnace is fed with a carrier gas consisting of high-purity nitrogen (99.999%) and high-purity oxygen (99.999%) (high-purity oxygen flow: 30ml / min, high-purity nitrogen flow: 3L / min), And quickly heat up to 1100 ℃ Finally, react for 60 minutes, and a large amount of white cotton-like zinc oxide nanowires can be sprayed out at the tube furnace mouth during the reaction. , the scanning electron micrograph of the material is shown in Figure 5.

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PUM

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Abstract

The invention relates to a mass production method of zinc oxide nanowires in the technical field of the semiconductor nanometer material. The method comprises the following steps: selecting proper zinc source and oxygen source to ensure that zinc oxide and activated carbon fully react in a high temperature state and zinc is prepared by the reduction of carbon, and performing the recrystallization and preferred growth of zinc under the action of carrier gas and the mixed oxygen to obtain zinc oxide nanowires. The method of the invention has simple process, low cost and environmental friend, and is suitable for industrialized production.

Description

technical field [0001] The invention relates to a method in the technical field of semiconductor nanomaterials, in particular to a method for mass production of zinc oxide nanowires. Background technique [0002] Zinc oxide (ZnO) is a direct band gap semiconductor material with a hexagonal wurtzite structure, and its band gap is 3.37eV at room temperature. Due to the small size effect, the surface electronic structure and crystal structure of one-dimensional nano-zinc oxide change, and it has the characteristics of surface effect, volume effect, tunnel effect and quantum size effect that ordinary zinc oxide materials do not have, as well as high dispersion and high transparency. . In recent years, it has shown many special excellent properties in catalysis, optics, magnetism, mechanics, etc., making it have great application prospects and value in many fields such as medicine, biology, optics, chemical industry, electronics, ceramics, etc. Nano-zinc oxide has optical, elec...

Claims

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Application Information

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IPC IPC(8): C01G9/03
Inventor 张亚非周志华魏浩苏言杰
Owner SHANGHAI JIAO TONG UNIV
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