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Preparation method of titanium dioxide film grown in situ on surface of titanium or titanium alloy material

A technology of titanium dioxide and in-situ growth, which is applied to the surface modification of titanium and titanium alloy materials. In the field of surface modification of titanium and titanium alloy materials, ion plasma technology can solve the problems of weak matrix binding force, influence by electrolyte, small film thickness, etc. problems, to achieve good binding, good photocatalytic or photocatalytic activity, and short time-consuming effects

Active Publication Date: 2011-01-05
JIAXING XINGTIAN ENVIRONMENTAL PROTECTION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is for the TiO existing in the above-mentioned prior art 2 The film preparation method is complicated to operate, consumes a lot of energy, the thickness of the film produced is small, the binding force with the substrate is weak, and it is affected by the electrolyte. A preparation method for in-situ growth of titanium dioxide on the surface of titanium or titanium alloy materials is provided, and the operation Simple, low energy consumption, no environmental pollution, the thickness of the formed film is suitable and strong binding force with the substrate

Method used

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Examples

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Embodiment 1

[0026] This embodiment is a method for growing a titanium dioxide film in situ on a titanium surface by using a titanium material as an anode, comprising the following steps:

[0027] (1) Pretreatment of titanium material surface: Ultrasonic cleaning in deionized water for 10 minutes, pickling in acid solution at 49°C for 1 minute after removing water, and finally ultrasonic cleaning in deionized water for 5 minutes, drying in a vacuum oven The acid solution is composed of: 30% nitric acid (70%)+3% hydrofluoric acid (60%), wherein the volume ratio of nitric acid and hydrofluoric acid is 10:1;

[0028] (2) Put the pretreated titanium material into the high-voltage pulse discharge reactor, use the titanium material as the anode of the high-voltage electrode, and use the multi-needle electrode as the cathode (grounding electrode);

[0029] (3) The distance between the electrodes is 100mm, oxygen is introduced, and the flow rate of oxygen is 0.5m 3 / h;

[0030] (4) Turn on the hig...

Embodiment 2

[0033] This embodiment is a method for growing a titanium dioxide film in situ on the surface of a titanium alloy material using a titanium alloy as an anode and a cathode, including the following steps:

[0034] (1) Pretreatment of the surface of titanium alloy materials: Ultrasonic cleaning in deionized water for 10 minutes, after removing water, pickling in acid solution at 49°C for 4 minutes, finally ultrasonic cleaning in deionized water for 5 minutes, and drying in a vacuum oven Stand-by, the acid composition is: 20% nitric acid (70%)+2% hydrofluoric acid (60%), wherein the volume ratio of nitric acid and hydrofluoric acid is 10:1;

[0035] (2) Put the two pretreated titanium alloy materials as the anode and cathode of the high-voltage electrode respectively, and put them into the high-voltage pulse discharge reactor;

[0036] (3) The distance between the electrodes is 5mm, oxygen is introduced, and the flow rate of oxygen is 0.4m 3 / h;

[0037] (4) Apply positive and ...

Embodiment 3

[0040] This embodiment is a method for using a porous titanium alloy as an anode to grow a titanium dioxide film in situ on the surface of a porous titanium alloy material, including the following steps:

[0041] (1) Pretreatment of the surface of the porous titanium alloy material: Ultrasonic cleaning in deionized water for 20 minutes, pickling in acid solution at 49°C for 10 minutes after removing moisture, and finally ultrasonic cleaning in deionized water for 10 minutes, and drying in a vacuum oven Dry for use, the composition of the acid solution is: 10% nitric acid (70%) + 1% hydrofluoric acid (60%), wherein the volume ratio of nitric acid and hydrofluoric acid is 10:1;

[0042] (2) Put the pretreated porous titanium alloy material into a high-voltage pulse discharge reactor, use the porous titanium alloy material as the anode of the high-voltage electrode, and use the multi-needle stainless steel electrode as the cathode (grounding electrode);

[0043] (3) The distance ...

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Abstract

The invention relates to the field of surface modification of titanium or titanium alloy material and provides a preparation method of a titanium dioxide film grown in situ on the surface of titanium or titanium alloy material in order to solve the problems of large electricity consumption and the influences of electrolyte and the like on the preparation process. The preparation method comprises the following steps of: putting pretreated titanium or titanium alloy material into a high-voltage pulse discharge reactor, taking the titanium or titanium alloy material as an anode of a high-voltage electrode, taking multiple parallelly connected pins or a stainless steel plate or another piece of preheated titanium or titanium alloy material as a cathode of a high-voltage electrode, leading oxygen into the high-voltage pulse discharge reactor, switching on a high-voltage pulse power supply, applying a high-voltage pulse and controlling the oxidation time of oxygen plasmas produced by a discharge of the high-voltage pulse to obtain titanium dioxide film grown in situ on the surface of titanium or titanium alloy material. The preparation method is simple in operation, energy-saving, free of being affected by the electrolyte and broad in application range.

Description

technical field [0001] The invention belongs to the field of surface modification of titanium and titanium alloy materials, in particular the application of plasma technology in the field of surface modification of titanium and titanium alloy materials, and particularly relates to the in-situ preparation of titanium dioxide films on the surface of titanium and titanium alloy materials by oxygen plasma method. Background technique [0002] Since 1982, Ward put TiO 2 The film material is used as an anode, and the simple recombination of photogenerated electrons and holes is prevented by applying an external anode bias, thereby improving the photocatalytic activity (Ward, J.Phys. Chem.1982, 86, 3599-3605), since photocatalytic technology has attracted widespread attention. TiO 2 Semiconductor photocatalysis technology is the TiO 2 Covering the anode of the photoelectrochemical cell, the TiO 2 At the same time, a bias voltage is applied to the electrode, so that the photoel...

Claims

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Application Information

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IPC IPC(8): C23C8/36B01J21/06B01J37/34A62D3/10A62D3/19A62D101/28
Inventor 张延宗熊晓燕韩月邓仕槐贺佳杨刚沈飞张小洪李黎王应军肖鸿李远伟彭宏
Owner JIAXING XINGTIAN ENVIRONMENTAL PROTECTION TECH CO LTD
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