Angle lapping-free cutting method of silicon chip

A silicon wafer and angle grinding technology, which is used in fine working devices, stone processing equipment, manufacturing tools, etc., can solve the problems of difficult to control the same size of the surface die, inconsistency in forming the surface angle, and large environmental pollution. Achieve the effect of eliminating the grinding process, good specification consistency and product quality improvement

Inactive Publication Date: 2010-12-15
黄山市晨曦电器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This cutting method can get the mesa die while cutting, but its biggest defect is that the angle of the mesa cannot be consistent. Because the whole process is manual operation, it is difficult to control the size of the mesa die to be exactly the same, and the working hours are long.
Great environmental pollution

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The grinding-free angle cutting method of silicon wafers includes the following steps:

[0017] 1) Apply the melted wax evenly on the surface of the glass plate, then mark the P side or N side of the silicon wafer to be cut in the same direction and place it flat on the surface of the glass plate coated with wax paint. Press lightly at the same time Rotate the wafer and wait for it to cool naturally;

[0018] 2) Place the cooled silicon wafer on the working table of the bench drill equipped with a round knife drill. At the cutting position of the wafer, when the bench drill is started to cut, use a small spoon to fill a little water-soaked emery and place it on the outside of the circular knife at any position. The water-soaked emery will automatically enter the grinding area of ​​the silicon wafer from the sand inlet, and the silicon wafer will Cutting and grinding work;

[0019] 3) After the cutting of the silicon wafer is completed, heat the glass plate until the w...

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PUM

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Abstract

The invention discloses an angle lapping-free cutting method of a silicon chip, which comprises the following steps of: 1, uniformly coating melted sealing wax on the surface of a glass plate, marking a P or N surface of the silicon chip to be cut, directing consistently, horizontally placing on the surface of the glass plate coated with the sealing wax, rotating the silicon chip while lightly pressing, naturally cooling; 2, placing the cooled silicon chip on the surface of a bench drill worktable provided with a sleeve circular cutter drill, holding a little water leaching silicon carbide with a small soup spoon while starting the cutting of a bench drill, placing at any position of the outer side of a sleeve circular cutter, enabling the water leaching silicon carbide to enter into a grinding area of the silicon chip from a sand feeding hole for grinding and lapping the silicon chip; and 3, after the silicon chip is cut completely, heating the glass plate until the sealing wax is melted, and taking down the surface of the worktable for rectifying a pipe core. The sleeve circular cutter is utilized for cutting and lapping the silicon chip, therefore, the invention has the advantages of good consistency, low damage ratio and low manufacture cost.

Description

technical field [0001] The invention relates to the field of manufacturing mesa rectifier tube cores, in particular to a grinding-free angle cutting method for silicon wafers. Background technique [0002] ZP diode mesa die series are divided into two categories: "spiral type" and "flat type", the specifications are 5A-600A and 100A-3000A respectively, there are more than 60 types, and the reverse peak voltage range is 800V-3000V; KP Thyristor mesa die series specifications are 5A-400A, a total of 15 kinds, and its forward and reverse peak voltage range is 1000V-2500V. The first step in the manufacture of mesa dies is to cut the diffused silicon wafer. There are three common cutting methods for silicon wafers: 1. Wire cutting method. The cutting principle is to use the charged molybdenum wire to contact the edge of the silicon wafer to generate electric sparks to cut the silicon wafer. This cutting method is caused by the high temperature of the arc. , so that the peripher...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00
Inventor 洪忠健
Owner 黄山市晨曦电器有限公司
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