Production technology of controllable silicon

Abstract

The invention relates to a production technology of controllable silicon, which comprises the following steps of oxidizing, photoetching and penetrating a ring, penetrating and diffusing, diffusing a short base region, and photoetching a cathode. The production technology is characterized in that the step of evaporating aluminum and alloy and retaining an alloy layer is added between the step of photoetching and penetrating the ring and the step of penetrating and diffusing. The production technology has the advantages that 1, as the diffusion rate of the aluminum in the silicon is far greater than that of the boron in the silicon, the production technology takes the aluminum as the penetrating and diffusing impurity source, so that the penetrating and diffusing time of the 4-inch silicon wafer (250-260um) is less than 180h; 2, as the impurity concentration of the aluminum diffusion is lower, the production technology further can effectively improve the backward voltage; and 3, as the transverse diffusion distance is 65-70% and the normal boron diffusion is 80%, the diffusion method can effectively improve the effective use ratio of the area of the chip and reduce the area of the chip.

Description

technical field [0001] The invention relates to a silicon controlled silicon production process. Background technique [0002] At present, the conventional thyristor production process, the 3-hour chip, the thickness of the chip is between 200 and 230 microns, the conventional high-temperature breakthrough condition: 1270 degrees, 150-180 hours, and when producing 4 hours or more chips, in order to ensure the work During the process, the silicon wafer does not break or less cracks, the thickness of the slice must be increased to 250-260 microns, and the punch-through diffusion is the same as other conventional diffusion, the slower the diffusion process goes, the punch-through time for a slice thickness of 250 to achieve the punch-through effect More than 500 hours (1270 degrees), 260 thick is more than 650 hours (1270 degrees) and sometimes even can not be penetrated, which greatly affects the production efficiency in production, the production process is extremely slow, an...

AI Technical Summary

Problems solved by technology

[0002] At present, the conventional thyristor production process, the 3-hour chip, the thickness of the chip is between 200 and 230 microns, the conventional high-temperature breakthrough condition: 1270 degrees, 150-180 hours, and when producing 4 hours or more chips, in order to ensure the work In the process, the silicon wafer does not break or less cracks, the thickness of the slice must be increased to 250-260 microns, and the punch-through diffusion is the same as other conventional diffusion, the slower the diffusion process goes, the punch-through time for a slice thickness of 250 is required to achieve the punch-through effect. More than 500 hours (1270 degrees), 260 thick is more than 650 hours (1270 degrees) and sometimes even can not be penetrated, which greatly affects the production efficiency in production, the production process is extremely slow, and the long-term high-temperature diffusion has a great impact on the damage of the device. The lifetime of the minority carrier is greatly damaged, the voltage level is reduced, the silicon wafer becomes brittle, and the fragmentation rate becomes higher, which is basically impossible to implement in actual production.