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Electrochemical preparation method of uniform and compact cuprous iodide semiconductor film

A cuprous iodide and semiconductor technology, which is applied in the field of electrochemical preparation of uniform and dense cuprous iodide semiconductor thin films, can solve problems such as the inability to obtain good thin film materials, and achieves good compactness, mild preparation conditions and low cost. Effect

Inactive Publication Date: 2010-10-27
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these methods are simplified in operation and equipment requirements, they cannot obtain good film materials.

Method used

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  • Electrochemical preparation method of uniform and compact cuprous iodide semiconductor film
  • Electrochemical preparation method of uniform and compact cuprous iodide semiconductor film
  • Electrochemical preparation method of uniform and compact cuprous iodide semiconductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1) Rinse the ITO conductive glass or silicon chip with acetone twice, then clean the ITO conductive glass or silicon chip in an ultrasonic cleaner with deionized water, and then put the ITO conductive glass or silicon chip in 10% nitric acid solution Activated, and finally rinsed repeatedly with deionized water;

[0016] 2) 0.002mol / L of Cu(NO 3 ) 2 , KI of 0.002mol / L, 3.4×10 -6 mol / L of K30 polyvinylpyrrolidone mixed with 2mol / L of HNO 3 or 0.1mol / L NaOH solution to adjust the pH value to 5 to obtain an electrolyte;

[0017] 3) ITO conductive glass or silicon wafer is used as working electrode, platinum sheet electrode is used as counter electrode, and saturated calomel electrode is put into electrolyte together as reference electrode for electrodeposition to obtain dense cuprous iodide semiconductor film. The electrodeposition voltage of the mercury electrode was 0.1 V, the electrodeposition time was 30 minutes, and the electrodeposition temperature was 25° C.

...

Embodiment 2

[0021] 1) Rinse the ITO conductive glass or silicon chip with acetone twice, then clean the ITO conductive glass or silicon chip in an ultrasonic cleaner with deionized water, and then put the ITO conductive glass or silicon chip in 10% nitric acid solution Activated, and finally rinsed repeatedly with deionized water;

[0022] 2) 0.02mol / L of Cu(NO 3 ) 2 , KI of 0.02mol / L, 3.4×10 -5 mol / L of K30 polyvinylpyrrolidone mixed with 2mol / L of HNO 3 or 0.1mol / L NaOH solution to adjust the pH value to 4 to obtain the electrolyte;

[0023] 3) ITO conductive glass or silicon wafer is used as working electrode, platinum sheet electrode is used as counter electrode, and saturated calomel electrode is put into electrolyte together as reference electrode for electrodeposition to obtain dense cuprous iodide semiconductor film. The electrodeposition voltage of the mercury electrode was -0.1V, the electrodeposition time was 20 minutes, and the electrodeposition temperature was 45°C.

[0...

Embodiment 3

[0027] 1) Rinse the ITO conductive glass or silicon wafer with acetone for 3 times, then clean the ITO conductive glass or silicon wafer in an ultrasonic cleaner with deionized water, and then place the ITO conductive glass or silicon wafer in 10% nitric acid solution Activated, and finally rinsed repeatedly with deionized water;

[0028] 2) 0.2mol / L of Cu(NO 3 ) 2 , KI of 0.2mol / L, 3.4×10 -4 mol / L of K30 polyvinylpyrrolidone mixed with 2mol / L of HNO 3 Or 0.1mol / L NaOH solution to adjust the pH value to 2 to obtain the electrolyte;

[0029] 3) ITO conductive glass or silicon chip is used as working electrode, platinum sheet electrode is used as counter electrode, and saturated calomel electrode is put into electrolyte together as reference electrode for electrodeposition, and dense cuprous iodide semiconductor film is obtained. The electrodeposition voltage of the mercury electrode was -0.3V, the electrodeposition time was 15 minutes, and the electrodeposition temperature ...

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Abstract

The invention discloses an electrochemical preparation method of a uniform and compact cuprous iodide semiconductor film, which comprises the following steps: 1) washing ITO conductive glass or silicon wafers with acetone 2 to 3 times, cleaning the ITO conductive glass or the silicon wafers in an ultrasonic cleaning machine with deionized water, then activating the ITO conductive glass or the silicon wafers in 10% of nitric acid solution, and finally washing with deionized water repeatedly; 2) mixing 0.002-2mol / L of Cu (NO3) 2, 0.002-2mol / L of KI, 3.4 x 10<-6>-1.7 x 10<-3>mol / L of K30 polyvinylpyrrolidone, and adjusting the pH value to 1 to 5 with 2mol / L of HNO3 or 0.1mol / L of NaOH solution to obtain electrolyte; and 3) taking the ITO conductive glass or the silicon wafers as a working electrode, taking a platinum sheet electrode as a counter electrode, and taking a saturated calomel electrode as a reference electrode to obtain the compact cuprous iodide semiconductor film by eletrodeposition, wherein the eletrodeposition voltage of the relative saturated calomel electrode is 0.1-0.4V, the eletrodeposition time is 1-30 minutes, and the electrodeposition temperature is 25-80 DEG C. The invention has the advantages of simple equipment, low cost, low reaction condition requirements and the like.

Description

technical field [0001] The invention relates to the preparation of semiconductor thin films, in particular to an electrochemical preparation method for uniform and dense cuprous iodide semiconductor thin films. Background technique [0002] Cuprous iodide is a p-type semiconductor with a direct bandgap of 3.1eV. Due to its many unique properties (such as large energy band gap, negative spin-orbit splitting, unusually strong temperature-sensitivity and diamagnetic-like behavior), cuprous iodide is widely used in the manufacture of semiconductor devices. With the increasing application of cuprous iodide, more and more researches have been done on it. [0003] So far, people have studied many kinds of preparation methods about cuprous iodide. Methods such as laser pulse deposition, magnetron sputtering and vacuum evaporation have been used to prepare copper iodide thin films, but these physical methods generally have disadvantages such as high reaction temperature, complicate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04C25D7/12
Inventor 刘润徐铸德陈科立王辉
Owner ZHEJIANG UNIV
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