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Electrode structure and light emitting element thereof

A light-emitting element and electrode structure technology, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of reducing the reliability of light-emitting diodes and overheating, and achieve the effects of avoiding overheating and reducing forward voltage

Active Publication Date: 2010-10-20
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, on the local area 46 where the current is concentrated, heat is gradually generated and accumulated there, resulting in overheating, which greatly reduces the reliability of the LED.

Method used

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  • Electrode structure and light emitting element thereof
  • Electrode structure and light emitting element thereof
  • Electrode structure and light emitting element thereof

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Embodiment Construction

[0104] Figure 5 to Figure 7 Shown is a light emitting element 50 according to a first embodiment of the present invention. Figure 5 is a plan view of the light emitting element 50, Figure 6 yes Figure 5 Sectional view along section line A-A, Figure 7 It is an equivalent circuit diagram of the light emitting element 50 electrically connected to a power source 92 . refer to Figure 5 and Figure 6 The light-emitting element 50 includes a substrate 52, a stack structure 62 disposed on the substrate 52, at least one groove 64 disposed in the stack structure 62, at least two first electrodes disposed in the groove 64 70 and at least two second electrodes 80 disposed on the stack structure 62 . The stacked structure 62 includes a first conductive type (n-type) semiconductor layer 54 disposed on the substrate 52, a light emitting structure 56 disposed on the first conductive type semiconductor layer 54, and a light emitting structure disposed on the light emitting structur...

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Abstract

The invention discloses an electrode structure, comprising at least two first electrodes and at least two second electrodes which are connected with a power supply parallel. Each first electrode has at least one first connecting pad and at least one first extending lead, one end of the first extending lead is connected with the first connecting pad, and the at least two first electrodes are not electrically connected. Each second electrode has at least one second connecting pad and at least one second extending lead, one end of the second extending lead is connected with the second connecting pad, and the at least two electrodes are not electrically connected. The electrode structure utilizes a multi-electrode design, which can provide multiple current paths to solve the present current gathering situation so as to reduce the forward voltage of the light emitting diode and prevent the overheat situation; furthermore, a light emitting element using the electrode structure can be taken as at least two light emitting diodes connected with the power supply in parallel and the total resistance of the parallel light emitting diodes is smaller than that of a single light emitting diode, thus a smaller outside power supply can be used.

Description

technical field [0001] The present invention relates to an electrode structure and its light-emitting element, in particular to an electrode structure and a light-emitting element, which avoids the current concentration problem and eliminates the overheating phenomenon through parallel electrode design, so as to greatly improve the reliability of the light-emitting element. Background technique [0002] Semiconductor light-emitting elements, such as light-emitting diodes, have been widely used in various traffic signs, automotive electronics, liquid crystal display backlight modules, and general lighting. Light-emitting diodes basically sequentially form an n-type semiconductor layer, a light-emitting region, and a p-type semiconductor layer on a substrate, and use electrodes formed on the p-type semiconductor layer and n-type semiconductor layer to pass holes and electrons injected from the semiconductor layer. Combined, a light beam is generated on the light-emitting regio...

Claims

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Application Information

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IPC IPC(8): H01L23/482H01L23/52H01L33/00
CPCH01L24/24H01L2924/12041H01L2224/24H01L2924/00H01L2924/00012
Inventor 王泰钧温伟值
Owner EPISTAR CORP
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