Solid-state imaging device, manufacturing method of the same, and electronic apparatus

Abstract

A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.

Description

technical field [0001] The present invention relates to a solid-state imaging device, a method of manufacturing the same, and electronic equipment (such as a camera including the solid-state imaging device). Background technique [0002] As a solid-state imaging device, an amplifying type solid-state imaging device is known, a representative example of which is a MOS image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor. In addition, there is also known a charge transport type solid-state imaging device, a representative example of which is a CCD (Charge Coupled Device) image sensor. These solid-state imaging devices are widely used in digital still cameras, digital video cameras, and the like. In recent years, for solid-state imaging devices mounted on cellular phones with cameras or PDAs (Personal Digital Assistants), MOS image sensors are widely used due to low voltage, low power consumption, and the like. [0003] In a MOS type solid-state ...

AI Technical Summary

Problems solved by technology

That is, when the hole charge storage region 107 approaches the transfer gate electrode 111, the gate voltage (read voltage) Vtg of the transfer transistor Tr1 increases, and thus it becomes difficult to read the signal charge

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