Color organic light emitting display panel and manufacturing method thereof
A light-emitting display, organic technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., to achieve the effect of improving injection capacity, high recombination efficiency, and prolonging life
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Embodiment 1
[0039] A color organic light-emitting display (OLED) panel and a preparation method thereof, the preparation method of which is as follows:
[0040] 1) Get a piece of ITO glass substrate 1 (this ITO glass substrate 1 comprises lower substrate glass 100 and the lower substrate ITO 101 covered on the lower substrate glass 100) cleaning, drying, then use it as the lower substrate, on the lower substrate of the lower substrate glass 100 Sputter a layer of 0.5nm Al 102 on the ITO 101, and then sputter a layer of 1nm Ni 103 metal layer, and then perform laser annealing. The annealing temperature is 850°C and the annealing time is 38s;
[0041] Such as figure 1 As shown, this step can obtain the best metal contact electrode, improve electrical conductivity, and reduce its contact resistance;
[0042] 2) Then apply photoresist on the glass substrate sputtered with Al / Ni, pre-bake it on a hot plate at 140°C for 3min, expose it for 50s, and use 0.5% NaCO 3 Develop, wash, dry, and bak...
Embodiment 2
[0064] A color organic light-emitting display (OLED) panel and a preparation method thereof, the preparation method of which is as follows:
[0065] 1) Get a piece of ITO glass substrate 1 to clean and dry, then use it as the lower substrate, sputter a layer of Al102 with a thickness of 1nm on the lower substrate ITO101 of the cover layer of the lower substrate glass 100, and then sputter a layer of Ni with a thickness of 2nm 103 metal layer, and then perform laser annealing, the annealing temperature is 850°C, and the annealing time is 38s;
[0066] 2) Then apply photoresist on the glass substrate sputtered with Al / Ni, pre-bake it on a hot plate at 145°C for 3.5min, expose it for 50s, and use 0.5% NaCO 3 Develop, wash, dry, and bake at 155°C for 5 minutes; then etch the lower substrate with ITO / Al / Ni, and use HCl:HNO 3 :H 2 o 2 = 5:5:2 etching solution to carve out the metal anode pattern; thereby completing the production of the lower substrate anode pattern;
[0067] 3)...
Embodiment 3
[0075] A color organic light-emitting display (OLED) panel and a preparation method thereof, the preparation method of which is as follows:
[0076] 1) Get a piece of ITO glass substrate 1 to clean and dry, and then use it as the lower substrate to first sputter a layer of Al 102 with a thickness of 0.8nm on the lower substrate ITO101 of the cover layer of the lower substrate glass 100, and then sputter a layer with a thickness of 1.5nm Ni 103 metal layer, followed by laser annealing, the annealing temperature is 850°C, and the annealing time is 38s;
[0077] 2) Then apply photoresist on the glass substrate sputtered with Al / Ni, pre-bake it on a hot plate at 150°C for 3.5min, expose for 50s, and use 0.5% NaCO 3 Develop, wash, dry, and bake at 160°C for 5 minutes; then etch the lower substrate with ITO / Al / Ni, and use HCl:HNO 3 :H 2 o 2 = 5:5:2 etching solution to carve out the metal anode pattern; thereby completing the production of the lower substrate anode pattern;
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