Graphene/silicon carbide Schottky junction based photovoltaic cell and preparation method thereof
A photovoltaic cell and Schottky junction technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as the inability to synthesize the macroscopic structure of carbon nanotubes with photovoltaic performance, the inability to precisely control the chirality of carbon tubes, and the large gaps in the network structure. , to achieve the effect of suitable for large-scale application, excellent light transmission and conductivity, and low cost
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[0019] The structural principle and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0020] refer to figure 1 , a kind of photovoltaic cell based on graphene / silicon Schottky junction, is characterized in that, comprises titanium palladium silver TiPdAg back electrode 4, is placed on the titanium palladium silver TiPdAg back electrode 4 with n-type monocrystalline silicon n-Si 3, Silicon dioxide SiO is placed on the n-type single crystal silicon wafer n-Si 3 2 Layer 2, silicon dioxide SiO 2 There is a through hole in the middle of layer 2, silicon dioxide SiO 2 A ring-shaped gold film 1 is placed on the layer 2, the inner hole of the gold film 1, the SiO 2 The through hole in the middle of the layer 2 and the upper surface of the n-type single crystal silicon chip n-Si 3 form a step hole, and one end of the titanium palladium silver TiPdAg back electrode 4 leads out a wire, and a graphene film 5 is...
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