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Silicon-based filed emission cathode material with low threshold electric field and preparation method thereof

A field emission cathode and emission cathode technology, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve the problems of complex emission cathode preparation process, low emission current density, and poor emission stability, etc. Great commercial application potential, simple and easy fabrication process, and the effect of high emission current density

Inactive Publication Date: 2010-06-09
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a silicon-based semiconductor field emission cathode material and its preparation method

Method used

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  • Silicon-based filed emission cathode material with low threshold electric field and preparation method thereof
  • Silicon-based filed emission cathode material with low threshold electric field and preparation method thereof
  • Silicon-based filed emission cathode material with low threshold electric field and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0037] The polished n-type (100) silicon was soaked in HF acid with a volume concentration of 3% for 2 minutes as the substrate, and the gallium nitride powder with a purity of 99.99% was sintered at 560°C for 120 minutes to make a gallium nitride target, and the substrate and target were placed in In the cavity of the laser pulse deposition system, the deposition chamber is pumped to about 5×10 -4 Pa, and heat the silicon substrate to 850°C, supply nitrogen with a purity of 99.99% as a protective gas and adjust the working pressure of the deposition chamber to 1Pa, set the frequency of the pulse laser to 13Hz, and start to deposit hexagonal ( 002) The gallium nitride thin film with preferred orientation and amorphous phase coexists, and the average thickness of the thin film reaches 40nm after maintaining for 2 minutes. The field emission current density is 1mA / cm 2 , the required applied electric field strength is 1.2V / μm.

Embodiment 2

[0039] The polished n-type (100) silicon was soaked in HF acid with a volume concentration of 3% for 2 minutes as the substrate, and the gallium nitride powder with a purity of 99.99% was sintered at 560°C for 120 minutes to make a gallium nitride target, and the substrate and target were placed in In the cavity of the laser pulse deposition system, the deposition chamber is pumped to about 5×10 -4Pa, and heat the silicon substrate to 850°C, supply nitrogen with a purity of 99.99% as a protective gas and adjust the working pressure of the deposition chamber to 1Pa, set the frequency of the pulse laser to 13Hz, and start to deposit hexagonal ( 002) GaN thin film with preferred orientation and amorphous phase coexistence, maintain the time for 1.5min to make the average thickness of the thin film reach 30nm. The field emission current density is 1mA / cm 2 , the required applied electric field strength is 0.9V / μm.

Embodiment 3

[0041] The polished n-type (100) silicon was soaked in HF acid with a volume concentration of 3% for 2 minutes as the substrate, and the aluminum nitride powder with a purity of 98% was sintered at 560°C for 120 minutes to make an aluminum nitride target, and the substrate and target were placed in In the cavity of the laser pulse deposition system, the deposition chamber is pumped to about 1×10 -4 Pa, and heat the silicon substrate to 900°C, supply nitrogen with a purity of 99.99% as a protective gas and adjust the working pressure of the deposition chamber to 0.5Pa, set the frequency of the pulse laser to 12Hz, and the pulse energy to 350mJ / pulse and start to deposit hexagonal (002) AlN thin film with preferred orientation and amorphous phase coexistence, maintain the time for 1.5min to make the average thickness of the film reach 25nm. The field emission current density is 1mA / cm 2 , the required applied electric field strength is 2.1V / μm.

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Abstract

The invention provides a silicon-based filed emission cathode material with a low threshold electric field and a preparation method thereof. The silicon-based filed emission cathode material can be GaN, AlN, BN, ZnO and ZnS and is characterized in that direct band gap semiconductor with the band gap width ranged from 3eV to 7eV can form a hexagonal wurtzite structure, and the material preferentially grows along the (002) crystal direction of the hexagonal wurtzite structure; the thickness thereof is more than 20mm and less than 50mm; and the material simultaneously has a hexagonal phase and an amorphous phase. The preparation method of the silicon-based filed emission cathode material comprises the following steps of carrying out laser pulse on a substrate which is silicon to deposit a film with certain thickness respectively through pretreatment and HF acid soaking so as to obtain a final product. A preparation technology is simple and easy, the prepared material has the low threshold electric field and electronic emission characteristics with high emission current density, and the cathode structure takes silicon as the substrate and can be integrated with other microelectronic devices easily; therefore, the cathode is an ideal cathode for manufacturing a vacuum microelectronic device.

Description

technical field [0001] The invention belongs to the field of field emission cathode materials, in particular to a silicon-based semiconductor film material and its preparation technology, in particular to the control technology of the surface morphology, orientation and crystallinity of the semiconductor nano film. The material can be used for high-efficiency electron emission devices, and is especially suitable for cathodes of field emission flat panel displays. Background technique [0002] Field emission cathode preparation technology is the key technology and research hotspot of field emission flat panel display (FED)-based vacuum microelectronic devices. As an important semiconductor material in the contemporary electronics industry, monocrystalline silicon has the characteristics of mature technology, high quality, low cost, and easy doping, which are difficult to replace. More importantly, the silicon-based field emission cathode based on it is easy to realize integr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J29/04H01J1/304H01J9/02
Inventor 王如志赵维汪浩严辉王波宋雪梅朱满康侯育冬张铭
Owner BEIJING UNIV OF TECH
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