Growth method of gallium arsenide monocrystal or germanium arsenide monocrystal

A growth method, germanium single crystal technology, which is applied in the field of gallium arsenide or germanium single crystal growth, can solve problems such as substrate quality impact, and achieve the effects of avoiding pollution and reducing costs

Active Publication Date: 2010-06-09
山西中科晶电信息材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But using B 2 o 3 When used as a covering agent, it has the following disadvantages: it is inevitable that B enters the gallium arsenide or germanium crystal and becomes an impurity, and the impurity content can reach 10 18 magnitude, and the entry of B has an impact on the quality of the substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The gallium arsenide or germanium single crystal growth method of the present invention comprises the following steps:

[0017] (1) Smooth the PBN with No. 1200 sandpaper until there is no obvious step, and then soak it in a washing solution with a volume ratio of 2:1:1 mixed with deionized water, ammonia water, and hydrogen peroxide for 30 minutes, and then put the PBN Wash with deionized water;

[0018] (2) Bake the PBN in a baking oven for about 30 minutes under a vacuum state of 200°C, and then bake it with a baking oven under a vacuum state of 900°C for 60 minutes;

[0019] (3) Fill the PBN with 1 atm of high-purity oxygen, and bake the PBN in a baking oven at 900°C for 40 minutes;

[0020] (4) When the PBN is cooled to about 50°C, it is directly loaded with clean polycrystalline materials, and the loading is completed within 2 minutes. Control below 10%;

[0021] (5) After the charging is completed, according to the traditional VGF process, the polycrystalline ...

Embodiment 2

[0023] The gallium arsenide or germanium single crystal growth method of the present invention comprises the following steps:

[0024] (1) Smooth the PBN with No. 1200 sandpaper until there is no obvious step, and then soak it in a washing solution with a volume ratio of 2:1:1 mixed with deionized water, ammonia water, and hydrogen peroxide for 30 minutes, and then put the PBN Wash with deionized water;

[0025] (2) Bake the PBN in a baking oven for about 30 minutes under a vacuum state of 200°C, and then bake it with a baking oven under a vacuum state of 1000°C for 60 minutes;

[0026] (3) Fill the PBN with 1 atm of high-purity oxygen, and bake the PBN in a baking oven at 1000°C for 40 minutes;

[0027] (4) When the PBN is cooled to about 50°C, it is directly loaded with clean polycrystalline materials, and the loading is completed within 2 minutes. controlled below 10%,;

[0028] (5) After the charging is completed, according to the traditional VGF process, the polycrysta...

Embodiment 3

[0030] The gallium arsenide or germanium single crystal growth method of the present invention comprises the following steps:

[0031] (1) Smooth the PBN with No. 1200 sandpaper until there is no obvious step, and then soak it in a washing solution with a volume ratio of 2:1:1 mixed with deionized water, ammonia water, and hydrogen peroxide for 30 minutes, and then put the PBN Wash with deionized water;

[0032] (2) Bake the PBN in a baking oven for about 30 minutes under a vacuum state of 200°C, and then bake it for 60 minutes under a vacuum state of 1050°C;

[0033] (3) Fill the PBN with 1 atm of high-purity oxygen, and bake the PBN in a baking oven at 1050°C for 40 minutes;

[0034] (4) When the PBN is cooled to about 50°C, it is directly loaded with clean polycrystalline materials, and the loading is completed within 2 minutes. controlled below 10%,;

[0035] (5) After the charging is completed, according to the traditional VGF process, the polycrystalline material is g...

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PUM

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Abstract

The invention relates to a growth method of gallium arsenide monocrystal or germanium arsenide monocrystal, which belongs to the field of crystal growth. Firstly, PBN is flattened with sand paper No. 1200 till PBN has no obvious steps, then PBN is put in mixed washing liquid of de-ionized water, ammonia and oxyful in the volume ratio of 2:1:1 to be immersed for 30 minutes, and then PBN is cleaned with de-ionized water; PBN is baked for about 30 minutes in a baking furnace at 180 to 220 DEG C in vacuum state, and then is baked for more than 30 minutes in the baking furnace at 900 to 1050 DEG C in vacuum state; 1atm high purity oxygen is filled into PBN, to ensure that PBN is baked for more than 30 minutes in the baking furnace at 900 to 1050 DEG C; after PBN is cooled down to 50 DEG C, clear polycrystalline material is directly loaded, the loading is accomplished within 2 minutes, the loading environment temperature is controlled to be between 20 to 25 DEG C, and the humidity is controlled to be below 40 percent; and after the loading, the crystal growth is accomplished according to traditional VGF process. The growth method of gallium arsenide monocrystal or germanium arsenide monocrystal not only ensures that the content of impurity B in the grown monocrystal is reduced, but also ensures that the quality of a substrate is not affected.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a gallium arsenide or germanium single crystal growth method. Background technique [0002] Nowadays, the growth technology of gallium arsenide or germanium single crystal mostly adopts traditional VGF (vertical gradient solidification method). Traditional VGF usually uses PBN (pyrolytic boron nitride) crucible as the reaction vessel, and the polycrystalline material is put into PBN Boron nitride) crucible, through the growth of polycrystalline material in PBN (pyrolytic boron nitride) crucible under the control of a certain temperature and pressure in each time period, since neither gallium arsenide nor germanium crystals are infiltrated with PBN, when directly synthesizing , due to the unevenness of the crucible, new nucleation centers are formed on the inner surface of the crucible, resulting in a decrease in the rate of GaAs or Ge single crystals. [0003] In order to solve the...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/42C30B29/06
Inventor 卜俊鹏于会永
Owner 山西中科晶电信息材料有限公司
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