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New antioxidants for post-cmp cleaning formulations

A technology for removing compositions and solvents, applied in detergent compounding agents, detergent compositions, chemical instruments and methods, etc., can solve problems such as increasing dielectric constant and damage

Active Publication Date: 2010-06-02
ENTEGRIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional cleaning chemicals often damage the ILD, absorb into the pores of the ILD, thereby increasing the dielectric constant, and / or corrode the metal structure

Method used

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  • New antioxidants for post-cmp cleaning formulations
  • New antioxidants for post-cmp cleaning formulations

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0072] Embodiment (i): The ratio of quaternary base to corrosion inhibitor is from about 0.1:1 to about 10:1, preferably from about 0.5:1 to about 5:1, even more preferably from about 1:1 to about 2:1 ; The ratio of organic amine to corrosion inhibitor is about 0.1:1 to about 10:1, preferably about 0.5:1 to about 5:1, even more preferably about 2:1 to about 3:1;

[0073] Embodiment (ii): The ratio of quaternary base to complexing agent is about 1:1 to about 5:1, preferably about 2:1 to about 3.5:1; the ratio of organic amine to complexing agent is about 1:1 to about 10:1, preferably about 3:1 to about 7:1; the ratio of corrosion inhibitor to complexing agent is about 0.001:1 to about 0.5:1, preferably about 0.01:1 to about 0.1:1;

[0074] Embodiment (iii): The ratio of organic amine to corrosion inhibitor is about 0.1:1 to about 10:1, preferably about 1:1 to about 3:1;

[0075] Embodiment (iv): The ratio of organic amine to corrosion inhibitor is about 0.1:1 to about 10:1, pr...

Embodiment 1

[0102] The covered PVD copper wafer was immersed in a solution consisting of a base solution containing TMAH, 1-amino-2-propanol and different antioxidants, and the corrosion rate of copper was determined using a potentiostat, where PVD Cu was the working electrode , the Pt sieve is the counter electrode, and the Ag / AgCl electrode is the reference electrode. The anodic corrosion rate of copper was calculated at an anodic voltage bias of 0.1 to 1.0 V compared to the open circuit potential. The results are summarized in Table 1 below.

[0103]

[0104] It can be seen that adenosine significantly reduces the corrosion rate of copper. Other advantages include, but are not limited to, minimized copper roughness, and stabilization of the copper(I) oxide surface after residue removal.

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PUM

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Abstract

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Description

technical field [0001] The present invention generally relates to compositions containing antioxidants for removing residues and / or contaminants from microelectronic devices having residues and / or contaminants thereon. Background technique [0002] Microelectronic device wafers are used to form integrated circuits. A microelectronic device wafer comprises a substrate, such as silicon, in which are patterned regions for depositing different materials, which have insulating, conducting, or semiconducting properties. [0003] In order to obtain correct patterning, excess material used in forming the layers on the substrate must be removed. Furthermore, in order to fabricate functional and reliable circuits, it is important to prepare flat or planar microelectronic wafer surfaces prior to subsequent processing. Thus, it is necessary to remove and / or polish certain surfaces of the microelectronic device wafer. [0004] Chemical mechanical polishing or planarization ("CMP") is ...

Claims

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Application Information

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IPC IPC(8): C11D1/00C11D1/62C11D3/30C09K13/00
CPCC11D11/0047C11D7/3209C11D7/265H01L31/18C11D3/0073C23G1/18H01L21/02063H01L21/02074C23F11/10C23G1/26C11D3/30C11D3/0084C11D2111/22
Inventor 张鹏杰弗里·巴尔内斯普雷尔那·森塔利亚埃马努埃尔·库珀卡尔·博格斯
Owner ENTEGRIS INC
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