Removal of bulge effect in nano patterning

A nano-patterning and nano-indentation technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of complexity, limitation, and expensive methods.

Inactive Publication Date: 2013-01-09
SEOUL NAT UNIV R&DB FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although electron beam lithography is suitable for producing fine patterns without the use of pattern masks, this method is very expensive and complicated
In addition, since the beam spot size of the device itself is fixed (typically around 100nm), there are limitations in forming linewidths on the order of several nanometers to tens of nanometers

Method used

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  • Removal of bulge effect in nano patterning
  • Removal of bulge effect in nano patterning
  • Removal of bulge effect in nano patterning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] Fabrication of nanostructures with protrusions removed by applying an electric field

[0093] (a) Coating PMMA on the substrate

[0094] The silicon substrate was cleaned by sonication using acetone, and a 4 wt% solution of PMMA with a molecular weight of 950K (950K C4) dissolved in chlorobenzene solvent was spin-coated on the silicon substrate. Then it was soft-baked in an oven at 170° C. for 30 minutes to obtain a substrate coated with a PMMA film without pinholes. According to AFM measurement, the film thickness is 500 nm, and the RMS roughness is 0.6 nm.

[0095] (b) Dimple formation by nanoindentation

[0096] Surface modification, ie, nanoindentation, was performed on the PMMA film using a commercially available AFM device (SPA-400, Seiko Instruments, Japan). Nanoindentation was performed in tapping mode using a pyramidal silicon probe (PPP-NCHR, Nanosensors, Switzerland) with a tip diameter of 10 nm, a spring constant of 42 N / m, and a resonance frequency of ...

Embodiment 2

[0101] Fabrication of nanostructures with protrusions removed by applying ultrasound

[0102] Nanoindentation was performed under the same conditions as in (a) and (b) of Example 1 to form concave holes, except that the following silicon substrate was used, which was dissolved by using 2% by weight of A solution of PMMA with a molecular weight of 950K (950KA2) in anisole instead of chlorobenzene was coated with a film with a thickness of 70 nm and an RMS roughness of 0.6 nm.

[0103] Using an ultrasonic treatment device (JAC Ultrasonic 1002, frequency = 40 KHz, power = 125 W, KODO Technical Research), ultrasonic waves were applied in a solvent with a DI:IPA ratio of 1:5 for 5 minutes.

[0104] In addition, nanoindentation as described above was performed to form triangular, rectangular, and hexagonal nanopatterns composed of continuous lines, and ultrasonic waves were applied for 5 minutes in a solvent with a DI:IPA ratio of 1:5.

[0105] Observing the surface before and af...

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Abstract

Manufacture of nanostructure includes forming nanoimage on surface of polymer, contacting polymer surface having nanoimage with predetermined solvent, and applying outer stimulus to polymer surface contacting with solvent to remove bulge formed around nanoimage. An independent claim is included for a nanostructure comprising a base body and a polymer layer formed with nanoimage on the base body.

Description

technical field [0001] The technology relates mainly to nanostructures, more specifically to nanostructures without protrusions, and to techniques for removing protrusions produced during nanopatterning. Background technique [0002] With the recent trend towards device miniaturization, a lot of research has been done on the fabrication of nanostructures and nanodevices. Typical methods for forming fine patterns include photolithography and electron beam exposure. Although the electron beam exposure method is suitable for producing fine patterns without using a pattern mask, this method is very expensive and complicated. In addition, since the beam spot size of the device itself is fixed (typically about 100 nm), there is a limitation in forming line widths on the order of several nanometers to tens of nanometers. [0003] A possible alternative to these methods is the AFM indentation method, according to which line widths on the order of tens of nanometers or less can be ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00B82B1/00
CPCB82Y10/00G03F7/0002B81C1/00031B82Y40/00Y10T428/249953B82B3/00
Inventor 申采浩田仁秀金廷九
Owner SEOUL NAT UNIV R&DB FOUND
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