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Semiconductor saturable absorption mirror as well as preparation method and optical fiber laser thereof

A saturable absorption and semiconductor technology, applied in lasers, laser components, phonon exciters, etc., can solve problems such as short life, inconsistent modulation depth, and optical damage

Inactive Publication Date: 2010-01-27
PEKING UNIV +1
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Problems solved by technology

However, the semiconductor saturable absorber mirror with high modulation depth used for fiber laser mode locking has the problem of inconsistent modulation depth within the reflection bandwidth of the Bragg reflector, resulting in a narrow range of mode locking, and is susceptible to optical damage and short life. Shortcomings

Method used

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  • Semiconductor saturable absorption mirror as well as preparation method and optical fiber laser thereof
  • Semiconductor saturable absorption mirror as well as preparation method and optical fiber laser thereof
  • Semiconductor saturable absorption mirror as well as preparation method and optical fiber laser thereof

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Embodiment Construction

[0069] The semiconductor saturable absorbing mirror and its preparation method and fiber laser proposed by the present invention are described as follows in conjunction with the accompanying drawings and embodiments.

[0070] In a fiber laser, after pump light is injected, the laser light starts to oscillate. Since the laser gain medium is broadband, the broadband of the laser gain medium here means that it can have a gain effect on the laser in a large frequency range. Due to the beat between the modes (frequency), there is always a maximum instantaneous pulse. This maximum transient pulse is captured by a saturable absorber, while other weak small-domain pulses are suppressed, resulting in a single independent ultrashort pulse within the laser cavity.

[0071] The semiconductor saturable absorber utilizes the saturable absorption characteristics of semiconductors such as indium gallium arsenide InGaAs in the near-infrared band. Indium gallium arsenide InGaAs is composed of...

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Abstract

The invention relates to a semiconductor saturable absorption mirror as well as a preparation method and an optical fiber laser thereof. The semiconductor saturable absorption mirror comprises a substrate, a reflector and an absorption layer, wherein the reflector is prepared on the substrate; the absorption layer is prepared on the reflector; the reflector is a Bragg reflector formed by a plurality of high and low refractive rate layers; the absorption layer comprises a plurality of absorption sublayers, and all the absorption sublayers and buffer layers matched with crystal lattices of the absorption sublayers interactively grow; the buffer layers are transparent semiconductor layers; and the thicknesses of the absorption sublayers are same. The semiconductor saturable absorption mirror is a high-consistency broadband high-demodulation depth semiconductor saturable absorption mirror and increases the use broadband by improving the demodulation depth consistency in the broadband range, and a locked mode is started by the semiconductor saturable absorption mirror so as to obtain stable locked mode pulse output.

Description

technical field [0001] The invention relates to the technical field of laser devices, in particular to a mode-locking device used in the field of fiber lasers and amplifiers, in particular to a semiconductor saturable absorption mirror, a preparation method thereof, and a fiber laser. Background technique [0002] Fiber lasers use semiconductor lasers as pumping light sources to generate ultrashort pulse lasers. The amplified high-energy pulses generated by fiber lasers have very important applications in industrial processing, medical and other fields. Rare-earth element Yb-doped femtosecond fiber lasers have attracted attention due to their high gain and wide wavelength band supporting ultrashort pulses. The recent application of ultrashort pulses in microprocessing and medical treatment requires stable laser pulses above 10μJ, pulse width <500fs, and repetition rate greater than 100kHz. [0003] The mode-locking of conventional fiber lasers is based on the soliton ef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/067H01S3/0941H01S3/08H01S3/16H01S3/10H01S3/101H01S3/063
Inventor 陈玲玲张梦张志刚樊仲维
Owner PEKING UNIV
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